Potential Well Based FDSOI MOSFET: A Novel Planar Device for 10 nm Gate Length

2019 ◽  
Author(s):  
Shafi Qureshi ◽  
Shruti Mehrotra
Keyword(s):  
Gate Length ◽  
Potential Well ◽  
Planar Device

GIANT RESONANCES IN A POTENTIAL WELL : A SEMICLASSICAL DESCRIPTION

1987 ◽  
Vol 48 (C2) ◽  
pp. C2-19-C2-26
Author(s):  
X. VIÑAS ◽  
A. GUIRAO
Keyword(s):  
Potential Well ◽  
Giant Resonances

The possibility of a kind of Bose particle to obtain high energy and superradiance

2020 ◽  
Author(s):  
Wen-Xiang Chen
Keyword(s):  
High Energy ◽  
Potential Well ◽  
Maximum Value

When \Delta x \Delta p < \hbar / 2 happens at the same time when the entropy reaches its maximum value, the boson will condense, and if there is a potential well but it does not explode, then the boson will gain high energy (more than normal).This article is to illustrate the possibility of a kind of Bose particle to obtain high energy.

OPTIMISATION OF SAND CASTING PROCESS FOR IMPELLER USING TAGUCHI METHODOLOGY

2020 ◽  
Vol XVII (2) ◽  
pp. 23-33
Author(s):  
Faisal Hafeez ◽  
Salman Hussain ◽  
Wasim Ahmad ◽  
Mirza Jahanzaib
Keyword(s):  
Surface Roughness ◽  
Surface Defects ◽  
A356 Alloy ◽  
Casting Process ◽  
Sand Casting ◽  
Gate Length ◽  
Taguchi Methodology ◽  
Confirmatory Tests ◽  
Binder Ratio ◽  
Response Measures

This paper presents the study to investigate the effects of binder ratio, in-gate length and pouring height on hardness, surface roughness and casting defects of sand casting process. Taguchi methodology with L9 orthogonal array was employed to design the experimentation. Sand casting of six blade impeller using A356 alloy was performed and empirical models for all the above response measures were formulated. Confirmatory tests and analysis of variance results confirmed the accuracy of the model. Binder ratio was found to be the most significant parameter affecting casting surface defects and surface roughness. This was followed by pouring height and in-gate length.

Quantum Tunneling

2017 ◽  
Author(s):  
Frank S. Levin
Keyword(s):  
Quantum Tunneling ◽  
Alpha Particles ◽  
Attractive Potential ◽  
Scanning Tunneling ◽  
Finite Width ◽  
Potential Well ◽  
Surface Molecules ◽  
Repulsive Coulomb ◽  
The Subject ◽  
The One

Quantum tunneling, wherein a quanject has a non-zero probability of tunneling into and then exiting a barrier of finite width and height, is the subject of Chapter 13. The description for the one-dimensional case is extended to the barrier being inverted, which forms an attractive potential well. The first application of this analysis is to the emission of alpha particles from the decay of radioactive nuclei, where the alpha-nucleus attraction is modeled by a potential well and the barrier is the repulsive Coulomb potential. Excellent results are obtained. Ditto for the similar analysis of proton burning in stars and yet a different analysis that explains tunneling through a Josephson junction, the connector between two superconductors. The final application is to the scanning tunneling microscope, a device that allows the microscopic surfaces of solids to be mapped via electrons from the surface molecules tunneling into the tip of the STM probe.

Analysis of Hot Carrier Injection According to Gate Length

2019 ◽  
Vol 19 (10) ◽  
pp. 6746-6749 ◽  
Author(s):  
Taejin Jang ◽  
Myung-Hyun Baek ◽  
Min-Woo Kwon ◽  
Sungmin Hwang ◽  
Jeesoo Chang ◽  
...  
Keyword(s):  
Gate Length ◽  
Carrier Injection ◽  
Hot Carrier ◽  
Hot Carrier Injection

scholarly journals Potential Well in Poincaré Recurrence

Entropy ◽  
2021 ◽  
Vol 23 (3) ◽  
pp. 379
Author(s):  
Miguel Abadi ◽  
Vitor Amorim ◽  
Sandro Gallo
Keyword(s):  
Dynamical System ◽  
Dynamical Systems ◽  
Stochastic Processes ◽  
Recurrence Time ◽  
Potential Well ◽  
Exponential Approximation ◽  
Mixing Processes ◽  
System Perspective ◽  
Return Times ◽  
Error Terms

From a physical/dynamical system perspective, the potential well represents the proportional mass of points that escape the neighbourhood of a given point. In the last 20 years, several works have shown the importance of this quantity to obtain precise approximations for several recurrence time distributions in mixing stochastic processes and dynamical systems. Besides providing a review of the different scaling factors used in the literature in recurrence times, the present work contributes two new results: (1) For ϕ-mixing and ψ-mixing processes, we give a new exponential approximation for hitting and return times using the potential well as the scaling parameter. The error terms are explicit and sharp. (2) We analyse the uniform positivity of the potential well. Our results apply to processes on countable alphabets and do not assume a complete grammar.

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