On deep levels in high-resistivity LEC-GaAs investigated by means of photo induced current transient spectroscopy

2002 ◽  
Author(s):  
D. Seghier ◽  
H.P. Gislason
Keyword(s):  
Deep Levels ◽  
Current Transient ◽  
High Resistivity ◽  
Induced Current ◽  
Lec Gaas ◽  
Transient Spectroscopy

Identification of Structures of the Deep Levels in 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 277-280
Author(s):  
Hiroki Nakane ◽  
Masashi Kato ◽  
Masaya Ichimura ◽  
Takeshi Ohshima
Keyword(s):  
Temperature Dependence ◽  
Annealing Temperature ◽  
Carrier Lifetime ◽  
Peak Height ◽  
Deep Levels ◽  
Current Transient ◽  
Induced Current ◽  
Annealing Behavior ◽  
Transient Spectroscopy ◽  
Two Peaks

We investigated annealing behavior of the carrier lifetime and the deep levels in electron irradiated n-type and semi-insulating 4H-SiCs. We observed two peaks for each sample by photo induced current transient spectroscopy (PICTS) measurements, and their heights depended on annealing temperature. By comparing the annealing behavior of the peak height with reported temperature dependence of concentrations of various defects, we speculated that the observed peaks originate from either VSiVC, CSiVC or EI4.

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