Verification of the integral charge-control relation for high-speed bipolar transistors at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1985.22076 ◽

1985 ◽

Vol 32 (6) ◽

pp. 1070-1076 ◽

Author(s):

H.-M. Rein ◽

H. Stubing ◽

M. Schroter

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Charge Control ◽

Current Densities ◽

Control Relation

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Two-dimensional modeling of high-speed bipolar transistors at high current densities using the integral charge-control relation

Physica B+C ◽

10.1016/0378-4363(85)90596-0 ◽

1985 ◽

Vol 129 (1-3) ◽

pp. 332-336 ◽

Author(s):

M. Schröter ◽

H.-M. Rein

Keyword(s):

Bipolar Transistors ◽

Two Dimensional ◽

High Current ◽

Charge Control ◽

Dimensional Modeling ◽

Current Densities ◽

Control Relation

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part I: One-dimensional model

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23146 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1741-1751 ◽

Author(s):

H. Stubing ◽

H.-M. Rein

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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Comments on "A compact physical large-signal model for high-speed bipolar transistors at high current densities-part I: one-dimensional model" (by H.-M. Rein et al., with reply)

IEEE Transactions on Electron Devices ◽

10.1109/16.7417 ◽

1988 ◽

Vol 35 (11) ◽

pp. 1995-1997

Author(s):

J.J. Liou ◽

H.-M. Rein ◽

M. Schroter ◽

H. Stubing

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

One Dimensional ◽

Current Densities

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A compact physical large-signal model for high-speed bipolar transistors at high current densities—Part II: Two-dimensional model and experimental results

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23147 ◽

1987 ◽

Vol 34 (8) ◽

pp. 1752-1761 ◽

Author(s):

H.-M. Rein ◽

M. Schroter

Keyword(s):

Bipolar Transistors ◽

Experimental Results ◽

Two Dimensional ◽

High Current ◽

Dimensional Model ◽

Large Signal ◽

Signal Model ◽

Two Dimensional Model ◽

Current Densities

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A Charge Control Relation for Bipolar Transistors

Bell System Technical Journal ◽

10.1002/j.1538-7305.1970.tb01759.x ◽

1970 ◽

Vol 49 (1) ◽

pp. 115-120 ◽

Author(s):

H. K. Gummel

Keyword(s):

Bipolar Transistors ◽

Charge Control ◽

A Charge ◽

Control Relation

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Base-collector heterojunction barrier effects at high current densities of Si/SiGe/Si heterojunction bipolar transistors

Proceedings IEEE Southeastcon '98 'Engineering for a New Era' ◽

10.1109/secon.1998.673317 ◽

2002 ◽

Author(s):

Jiling Song ◽

J.S. Yuan

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

High Current ◽

Barrier Effects ◽

Current Densities

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Base-collector junction capacitance of bipolar transistors operating at high current densities

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1987.23236 ◽

1987 ◽

Vol 34 (11) ◽

pp. 2304-2308 ◽

Author(s):

J.J. Liou

Keyword(s):

Bipolar Transistors ◽

High Current ◽

Junction Capacitance ◽

Collector Junction ◽

Current Densities

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The influence of high current densities on the avalanche breakdown characteristics of bipolar transistors†

International Journal of Electronics ◽

10.1080/00207217008900188 ◽

1970 ◽

Vol 29 (1) ◽

pp. 73-81 ◽

Author(s):

V. A. BROWNE ◽

P. MARS

Keyword(s):

Bipolar Transistors ◽

Avalanche Breakdown ◽

High Current ◽

Current Densities

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High-speed, high-current-gain p-n-p InP/InGaAs heterojunction bipolar transistors

IEEE Electron Device Letters ◽

10.1109/55.215087 ◽

1993 ◽

Vol 14 (1) ◽

pp. 19-21 ◽

Author(s):

L.M. Lunardi ◽

S. Chandrasekhar ◽

R.A. Hamm

Keyword(s):

Heterojunction Bipolar Transistors ◽

Bipolar Transistors ◽

Current Gain ◽

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Improved modeling for transit time and excess phase delay of advanced bipolar transistors at high current densities

Proceedings of the 44th IEEE 2001 Midwest Symposium on Circuits and Systems. MWSCAS 2001 (Cat. No.01CH37257) ◽

10.1109/mwscas.2001.986319 ◽

2002 ◽

Author(s):

Seonghearn Lee

Keyword(s):

Transit Time ◽

Bipolar Transistors ◽

Phase Delay ◽

High Current ◽

Current Densities ◽

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