W-Band CMOS 4-Bit Phase Shifter for High Power and Phase Compression Points

2015 ◽  
Vol 62 (1) ◽  
pp. 1-5 ◽  
Author(s):  
Hyo-Sung Lee ◽  
Byung-Wook Min
Keyword(s):  
High Power ◽  
Phase Shifter ◽  
W Band

scholarly journals High-power squeeze-type phase shifter at W-band

2002 ◽  
Vol 50 (5) ◽  
pp. 1437-1441 ◽  
Author(s):  
M.E. Hill ◽  
R.S. Callin ◽  
M. Seidel ◽  
D.H. Whittum
Keyword(s):  
High Power ◽  
Phase Shifter ◽  
Type Phase ◽  
W Band

High power broadband W-band gyrotron traveling wave amplifier

2003 ◽  
Author(s):  
D.B. McDermott ◽  
H.H. Song ◽  
L.R. Barnett ◽  
Y. Hirata ◽  
A.T. Lin ◽  
...  
Keyword(s):  
High Power ◽  
Traveling Wave ◽  
W Band ◽  
Traveling Wave Amplifier

W-band uni-travelling-carrier photodiode module for high-power photonic millimetre-wave generation

2002 ◽  
Vol 38 (22) ◽  
pp. 1376 ◽  
Author(s):  
H. Ito ◽  
T. Furuta ◽  
T. Ito ◽  
Y. Muramoto ◽  
K. Tsuzuki ◽  
...  
Keyword(s):  
High Power ◽  
Wave Generation ◽  
Millimetre Wave ◽  
W Band

scholarly journals Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

2021 ◽  
Vol 11 (19) ◽  
pp. 9017
Author(s):  
Jinho Jeong ◽  
Yeongmin Jang ◽  
Jongyoun Kim ◽  
Sosu Kim ◽  
Wansik Kim
Keyword(s):  
Power Density ◽  
Output Power ◽  
Power Amplifier ◽  
High Power ◽  
Common Source ◽  
High Electron ◽  
Large Signal ◽  
Power Added Efficiency ◽  
W Band ◽  
Gan On Si

In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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