Dual Band VCO Based on a High-Quality Factor Switched Interdigital Resonator for the Ku Band Using 180-nm CMOS Technology

2018 ◽  
Vol 65 (12) ◽  
pp. 1874-1878 ◽  
Author(s):  
Islam Mansour ◽  
Mohamed Aboualalaa ◽  
Ahmed Allam ◽  
Adel B. Abdel-Rahman ◽  
Mohammed Abo-Zahhad ◽  
...  
Keyword(s):  
Quality Factor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
Dual Band ◽  
High Quality ◽  
Ku Band

scholarly journals Tunable dual-band and high-quality-factor perfect absorption based on VO2-assisted metasurfaces

2021 ◽  
Vol 29 (20) ◽  
pp. 31488
Author(s):  
Shiwang Yu ◽  
Zhancheng Li ◽  
Wenwei Liu ◽  
Hua Cheng ◽  
Yuebian Zhang ◽  
...  
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
Dual Band ◽  
High Quality ◽  
Perfect Absorption

Dual-Band Bandpass Filter Optimized for High Q-Factor

2021 ◽  
Vol 36 (4) ◽  
pp. 398-410
Author(s):  
Walid Fahmy ◽  
Asmaa Farahat ◽  
Khalid Hussein ◽  
Abd-El-Hadi Ammar
Keyword(s):  
Quality Factor ◽  
Bandpass Filter ◽  
High Quality Factor ◽  
Dual Band ◽  
Optimized Design ◽  
Hybrid Architecture ◽  
Quality Factors ◽  
High Quality ◽  
Resonant Frequencies ◽  
Simulation Results

High quality factor bandpass filters based on a number of cascaded resonators of dual-resonance mechanism are proposed in the present paper. Each resonator is constructed as two overlapped coplanar waveguide (CPW) resonant structures. The cascaded resonators mediate microwave coupling between two isolated corner-shaped CPW feeders only at the resonant frequencies leading to a bandpass filter of high quality factor. The two resonant frequencies and the separation between them can be fine-tuned by the dimensions of the structure. The effects of the dimensional parameters of the resonator and the feeding CPW regions on the resonant frequencies and the performance of the bandpass filter are investigated. The effect of the loss tangent of the dielectric substrate material on the quality factors at the two resonant frequencies is studied. Three prototypes of the proposed filter are fabricated and experimentally studied for more understanding of the underlying physical principles of operation and for verifying some of the simulation results. The experimental results show good agreement when compared with the corresponding simulation results. It is shown that, at low enough absolute temperature, the proposed structure can operate as superconducting microwave resonator when made from the appropriate materials. Also, it is shown that an optimized design of the proposed bandpass filter, based on superconducting CPWR structure, can achieve quality factors high enough to form a quantum data bus for hybrid architecture of quantum information systems.

Dual‐Band Filtering Dielectric Antenna Using High‐Quality‐Factor Y 3 Al 5 O 12 Transparent Dielectric Ceramic

2021 ◽  
pp. 2100115
Author(s):  
Hai-Wen Liu ◽  
Hong-Liang Tian ◽  
Chao Du ◽  
Tao-Tao Huang ◽  
Zhen-Yu Zhao ◽  
...  
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
Dual Band ◽  
Dielectric Ceramic ◽  
High Quality ◽  
Dielectric Antenna ◽  
Transparent Dielectric

scholarly journals Digitally-Controlled Bondwire Inductor with High Quality Factor and Wide Tuning Range

2020 ◽  
Vol 20 (3) ◽  
pp. 207-212
Author(s):  
Yonggoo Lee ◽  
Bomson Lee
Keyword(s):  
Quality Factor ◽  
Integrated Circuit ◽  
Tuning Range ◽  
Complementary Metal Oxide Semiconductor ◽  
Cmos Technology ◽  
High Quality Factor ◽  
Silicon On Insulator ◽  
Oxide Semiconductor ◽  
Wide Tuning Range ◽  
High Quality

A tunable bondwire inductor (TBI) with high-quality factor and wide tuning range is presented. The proposed TBI is fabricated on a single chip by combining a single-pole four-throw (SP4T) switch integrated circuit (IC) and four bondwire inductors on a package substrate. The SP4T switch IC is fabricated using 180 nm silicon-on-insulator (SOI) complementary metal-oxide-semiconductor (CMOS) technology. The fabricated TBI chip exhibits a 521% tuning range of inductance from 1.77 to 11 nH at 0.1 GHz and a relatively high-quality factor. To the knowledge of the authors, the results of this work demonstrate the best combined performance of inductance tuning range and quality factor.

A Long Bar Type Silicon Resonator with a High Quality Factor

2014 ◽  
Vol 134 (2) ◽  
pp. 26-31 ◽  
Author(s):  
Nguyen Van Toan ◽  
Masaya Toda ◽  
Yusuke Kawai ◽  
Takahito Ono
Keyword(s):  
Quality Factor ◽  
High Quality Factor ◽  
High Quality ◽  
Type Silicon ◽  
Silicon Resonator

scholarly journals Coherent suppression of backscattering in optical microresonators

2020 ◽  
Vol 9 (1) ◽  
Author(s):  
Andreas Ø. Svela ◽  
Jonathan M. Silver ◽  
Leonardo Del Bino ◽  
Shuangyou Zhang ◽  
Michael T. M. Woodley ◽  
...  
Keyword(s):  
Quality Factor ◽  
Bulk Material ◽  
Near Field ◽  
High Quality Factor ◽  
Dual Frequency ◽  
High Quality ◽  
Frequency Combs ◽  
Optical Microresonators ◽  
Whispering Gallery ◽  
The Stability

AbstractAs light propagates along a waveguide, a fraction of the field can be reflected by Rayleigh scatterers. In high-quality-factor whispering-gallery-mode microresonators, this intrinsic backscattering is primarily caused by either surface or bulk material imperfections. For several types of microresonator-based experiments and applications, minimal backscattering in the cavity is of critical importance, and thus, the ability to suppress backscattering is essential. We demonstrate that the introduction of an additional scatterer into the near field of a high-quality-factor microresonator can coherently suppress the amount of backscattering in the microresonator by more than 30 dB. The method relies on controlling the scatterer position such that the intrinsic and scatterer-induced backpropagating fields destructively interfere. This technique is useful in microresonator applications where backscattering is currently limiting the performance of devices, such as ring-laser gyroscopes and dual frequency combs, which both suffer from injection locking. Moreover, these findings are of interest for integrated photonic circuits in which back reflections could negatively impact the stability of laser sources or other components.

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