Reliability of Highly Stable Amorphous-Silicon Thin-Film Transistors Under Low Gate-Field Stress—Part II: Optimization of Fabrication Conditions and Gate Voltage Dependence

2016 ◽  
Vol 16 (2) ◽  
pp. 255-262
Author(s):  
Ting Liu ◽  
Levent E. Aygun ◽  
Sigurd Wagner ◽  
James C. Sturm
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Voltage ◽  
Thin Film Transistors ◽  
Voltage Dependence ◽  
Silicon Thin Film ◽  
Field Stress ◽  
Gate Voltage Dependence

An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

2019 ◽  
Vol 66 (6) ◽  
pp. 2614-2619 ◽  
Author(s):  
Guan-Fu Chen ◽  
Hong-Chih Chen ◽  
Ting-Chang Chang ◽  
Shin-Ping Huang ◽  
Hua-Mao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Voltage ◽  
Energy Band ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Band Model ◽  
Silicon Thin Film ◽  
Dual Gate ◽  
Hydrogenated Amorphous

The Instability Characteristics of Amorphous Silicon Thin Film Transistors with Various Interfacial and Bulk Defect States

1997 ◽  
Vol 36 (Part 1, No. 10) ◽  
pp. 6226-6229 ◽  
Author(s):  
Huang-Chung Cheng ◽  
Jun-Wei Tsai ◽  
Chun-Yao Huang ◽  
Fang-Chen Luo ◽  
Hsing-Chien Tuan
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Defect States ◽  
Silicon Thin Film

Hot-Wire Deposited Amorphous Silicon Thin-Film Transistors

1996 ◽  
Vol 424 ◽  
Author(s):  
R. E. I. Schropp ◽  
K. F. Feenstra ◽  
C. H. M. Van Der Werf ◽  
J. Holleman ◽  
H. Meiling
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Chemical Vapor ◽  
Current Crowding ◽  
Hot Wire ◽  
Saturation Regime ◽  
Silicon Thin Film ◽  
Order Of Magnitude

AbstractWe present the first thin film transistors (TFTs) incorporating a low hydrogen content (5 - 9 at.-%) amorphous silicon (a-Si:H) layer deposited by the Hot-Wire Chemical Vapor Deposition (HWCVD) technique. This demonstrates the possibility of utilizing this material in devices. The deposition rate by Hot-Wire CVD is an order of magnitude higher than by Plasma Enhanced CVD. The switching ratio for TFTs based on HWCVD a-Si:H is better than 5 orders of magnitude. The field-effect mobility as determined from the saturation regime of the transfer characteristics is still quite poor. The interface with the gate dielectric needs further optimization. Current crowding effects, however, could be completely eliminated by a H2 plasma treatment of the HW-deposited intrinsic layer. In contrast to the PECVD reference device, the HWCVD device appears to be almost unsensitive to bias voltage stressing. This shows that HW-deposited material might be an approach to much more stable devices.

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Effects of the Deposition Sequence on Amorphous Silicon Thin-Film Transistors

1989 ◽  
Vol 28 (Part 1, No. 11) ◽  
pp. 2197-2200 ◽  
Author(s):  
Kouichi Hiranaka ◽  
Tetsuzo Yoshimura ◽  
Tadahisa Yamaguchi
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Silicon Thin Film
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