An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

2019 ◽  
Vol 66 (6) ◽  
pp. 2614-2619 ◽  
Author(s):  
Guan-Fu Chen ◽  
Hong-Chih Chen ◽  
Ting-Chang Chang ◽  
Shin-Ping Huang ◽  
Hua-Mao Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Gate Voltage ◽  
Energy Band ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Band Model ◽  
Silicon Thin Film ◽  
Dual Gate ◽  
Hydrogenated Amorphous

Performance of thin hydrogenated amorphous silicon thin‐film transistors

1991 ◽  
Vol 69 (4) ◽  
pp. 2339-2345 ◽  
Author(s):  
J. Kanicki ◽  
F. R. Libsch ◽  
J. Griffith ◽  
R. Polastre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous

Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors

2007 ◽  
Vol 46 (3B) ◽  
pp. 1318-1321 ◽  
Author(s):  
Huai-Yuan Tseng ◽  
Ko-Yu Chiang ◽  
Hau-Yan Lu ◽  
Chen-Pang Kung ◽  
Ting-Chang Chang
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Voltage Instability ◽  
Hydrogenated Amorphous

Temperature dependence of hydrogenated amorphous silicon thin-film transistors

1995 ◽  
Vol 30 (9) ◽  
pp. 2254-2256 ◽  
Author(s):  
Bor -Yir Chen ◽  
Wei -Hsiung Wu ◽  
Jiann -Ruey Chen ◽  
Chum -Sam Hong
Keyword(s):  
Thin Film ◽  
Temperature Dependence ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Thin Film ◽  
Hydrogenated Amorphous
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