Approaching Optimal Characteristics of 10-nm High-Performance Devices: A Quantum Transport Simulation Study of Si FinFET

2008 ◽  
Vol 55 (3) ◽  
pp. 743-753 ◽  
Author(s):  
Hasanur R. Khan ◽  
Denis Mamaluy ◽  
Dragica Vasileska
Keyword(s):  
Quantum Transport ◽  
Simulation Study ◽  
High Performance ◽  
Transport Simulation

scholarly journals Random Dopant-Induced Variability in Si-InAs Nanowire Tunnel FETs: A Quantum Transport Simulation Study

2018 ◽  
Vol 39 (9) ◽  
pp. 1473-1476 ◽  
Author(s):  
Hamilton Carrillo-Nunez ◽  
Jaehyun Lee ◽  
Salim Berrada ◽  
Cristina Medina-Bailon ◽  
Fikru Adamu-Lema ◽  
...  
Keyword(s):  
Quantum Transport ◽  
Simulation Study ◽  
Transport Simulation ◽  
Tunnel Fets ◽  
Random Dopant

Quantum transport simulation of the two-dimensional GaSb transistors

2021 ◽  
Vol 42 (12) ◽  
pp. 122001
Author(s):  
Panpan Wang ◽  
Songxuan Han ◽  
Ruge Quhe
Keyword(s):  
Quantum Transport ◽  
Delay Time ◽  
High Performance ◽  
Field Effect Transistors ◽  
Oxide Semiconductor ◽  
Two Dimensional ◽  
Ballistic Performance ◽  
Transport Simulation ◽  
Technology Roadmap ◽  
Power Delay Product

Abstract Owing to the high carrier mobility, two-dimensional (2D) gallium antimonite (GaSb) is a promising channel material for field-effect transistors (FETs) in the post-silicon era. We investigated the ballistic performance of the 2D GaSb metal–oxide–semiconductor FETs with a 10 nm-gate-length by the ab initio quantum transport simulation. Because of the wider bandgap and better gate-control ability, the performance of the 10-nm monolayer (ML) GaSb FETs is generally superior to the bilayer counterparts, including the three-to-four orders of magnitude larger on-current. Via hydrogenation, the delay-time and power consumption can be further enhanced with magnitude up to 35% and 57%, respectively, thanks to the expanded bandgap. The 10-nm ML GaSb FETs can almost meet the International Technology Roadmap for Semiconductors (ITRS) for high-performance demands in terms of the on-state current, intrinsic delay time, and power-delay product.

Photoresponse of MoSe2 Transistors: A Fully Numerical Quantum Transport Simulation Study

2020 ◽  
Vol 2 (11) ◽  
pp. 3765-3772
Author(s):  
Gyuchull Han ◽  
Manasa Kaniselvan ◽  
Youngki Yoon
Keyword(s):  
Quantum Transport ◽  
Simulation Study ◽  
Transport Simulation

Simulation Study on Real Laminar Assembly of g-C3N4 High Performance Free Standing Membrane with Bio-based Materials

2021 ◽  
pp. 119598
Author(s):  
Xiuyang Zou ◽  
Meisheng Li ◽  
Hui-Fang Xiao ◽  
Shouyong Zhou ◽  
Chenglung Chen ◽  
...  
Keyword(s):  
Simulation Study ◽  
High Performance ◽  
Free Standing

scholarly journals Quantum Transport Simulation of III-V TFETs with Reduced-Order $$ \varvec{k} \cdot \varvec{p} $$ k · p Method

2016 ◽  
pp. 151-180 ◽  
Author(s):  
Jun Z. Huang ◽  
Lining Zhang ◽  
Pengyu Long ◽  
Michael Povolotskyi ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Transport ◽  
Reduced Order ◽  
Transport Simulation

Sub-5-nm Monolayer Silicane Transistor: A First-Principles Quantum Transport Simulation

2020 ◽  
Vol 14 (2) ◽  
Author(s):  
Yuanyuan Pan ◽  
Jingrou Dai ◽  
Lin Xu ◽  
Jie Yang ◽  
Xiuying Zhang ◽  
...  
Keyword(s):  
Quantum Transport ◽  
First Principles ◽  
Transport Simulation

Self-Calibration of Push-Pull Solenoid Actuators in Electrohydraulic Valves

2004 ◽  
Author(s):  
Qing Hui Yuan ◽  
Perry Y. Li
Keyword(s):  
Mechanical Property ◽  
Parameter Identification ◽  
Simulation Study ◽  
Electromagnetic Force ◽  
High Performance ◽  
Calibration Procedure ◽  
Performance Control ◽  
System Parameters ◽  
Self Calibration ◽  
Solenoid Actuator

System parameters for solenoid actuators are important for high performance control and for self-sensing. Due to the non-linearities in the solenoid actuators, parameter identification procedures that aim to obtain the electro-mechanical property can be complex and time consuming. In this paper, a self-calibration procedure for solenoid actuators in push-pull configurations is proposed. Utilizing the fact that the inductances of the solenoids share the same parameters as those for the electromagnetic force, the parameters for the electromagnetic force can be obtained from the easily obtainable electrical signals such as the voltage and current signals, and two inexpensive on-off sensors. The calibration procedure involves only actuating the solenoid actuator back and forth. Simulation study is presented to verify the method.

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