Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film

2008 ◽  
Vol 55 (4) ◽  
pp. 978-985 ◽  
Author(s):  
Rong-Hwei Yeh ◽  
Tai-Rong Yu ◽  
Te-Cheng Chung ◽  
Shih-Yung Lo ◽  
Jyh-Wong Hong
1996 ◽  
Vol 424 ◽  
Author(s):  
Tong Li ◽  
Chun-Ying Chen ◽  
Charles T. Malone ◽  
Jerzy Kanicki

AbstractHydrogenated amorphous silicon nitride thin films, prepared in a large area plasma-enhanced chemical vapor (PECVD) deposition system utilizing high-rate deposition technique, have been characterized by various techniques. Experimental data obtained from this study are presented and compared to low-rate deposited PECVD films. Special attention has been devoted during this study to the difference between high- and low-rate deposited samples. The amorphous silicon (a-Si:H) thin-film transistors (TFTs) based on high-rate PECVD materials have been fabricated and characterized. The evaluation of a-Si:H TFTs indicates a good electrical performance which is comparable to its low-rate PECVD materials counterparts.


2001 ◽  
Vol 89 (10) ◽  
pp. 5491-5496 ◽  
Author(s):  
G. Oversluizen ◽  
V. Zieren ◽  
M. T. Johnson ◽  
A. A. van der Put ◽  
W. H. M. Lodders

Sign in / Sign up

Export Citation Format

Share Document