Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

Kazushige Takechi; Mitsuru Nakata; Kazufumi Azuma; Hirotaka Yamaguchi; Setsuo Kaneko

doi:10.1109/ted.2009.2026319

Dual-Gate Characteristics of Amorphous $ \hbox{InGaZnO}_{4}$ Thin-Film Transistors as Compared to Those of Hydrogenated Amorphous Silicon Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2009.2026319 ◽

2009 ◽

Vol 56 (9) ◽

pp. 2027-2033 ◽

Cited By ~ 54

Author(s):

Kazushige Takechi ◽

Mitsuru Nakata ◽

Kazufumi Azuma ◽

Hirotaka Yamaguchi ◽

Setsuo Kaneko

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Dual Gate ◽

Hydrogenated Amorphous

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An Energy-Band Model for Dual-Gate-Voltage Sweeping in Hydrogenated Amorphous Silicon Thin-Film Transistors

IEEE Transactions on Electron Devices ◽

10.1109/ted.2019.2908859 ◽

2019 ◽

Vol 66 (6) ◽

pp. 2614-2619 ◽

Cited By ~ 2

Author(s):

Guan-Fu Chen ◽

Hong-Chih Chen ◽

Ting-Chang Chang ◽

Shin-Ping Huang ◽

Hua-Mao Chen ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Gate Voltage ◽

Energy Band ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Band Model ◽

Silicon Thin Film ◽

Dual Gate ◽

Hydrogenated Amorphous

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A self‐consistent analysis of temperature‐dependent field‐effect measurements in hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.337407 ◽

1986 ◽

Vol 60 (2) ◽

pp. 643-649 ◽

Cited By ~ 37

Author(s):

R. E. I. Schropp ◽

J. Snijder ◽

J. F. Verwey

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Field Effect ◽

Hydrogenated Amorphous Silicon ◽

Temperature Dependent ◽

Silicon Thin Film ◽

Self Consistent ◽

Hydrogenated Amorphous ◽

Dependent Field

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Performance of thin hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.348716 ◽

1991 ◽

Vol 69 (4) ◽

pp. 2339-2345 ◽

Cited By ~ 102

Author(s):

J. Kanicki ◽

F. R. Libsch ◽

J. Griffith ◽

R. Polastre

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Modeling of the static and dynamic behavior of hydrogenated amorphous silicon thin-film transistors

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.1472427 ◽

2002 ◽

Vol 20 (3) ◽

pp. 1038-1042 ◽

Cited By ~ 42

Author(s):

P. Servati ◽

A. Nathan

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Dynamic Behavior ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Temperature-dependent effects in field-effect measurements on hydrogenated amorphous silicon thin-film transistors

Philosophical Magazine B ◽

10.1080/13642818808218382 ◽

1988 ◽

Vol 58 (4) ◽

pp. 389-410 ◽

Cited By ~ 28

Author(s):

R. Schumacher ◽

P. Thomas ◽

K. Weber ◽

W. Fuhs ◽

F. Djamdji ◽

...

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Field Effect ◽

Hydrogenated Amorphous Silicon ◽

Temperature Dependent ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Temperature Dependent Characteristics of Hydrogenated Amorphous Silicon thin film Transistors

MRS Proceedings ◽

10.1557/proc-118-267 ◽

1988 ◽

Vol 118 ◽

Cited By ~ 21

Author(s):

N. Lustig ◽

J. Kanicki ◽

R. Wisnieff ◽

J. Griffith

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Temperature Dependent ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Layout Dependence on Threshold Voltage Instability of Hydrogenated Amorphous Silicon Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.46.1318 ◽

2007 ◽

Vol 46 (3B) ◽

pp. 1318-1321 ◽

Cited By ~ 7

Author(s):

Huai-Yuan Tseng ◽

Ko-Yu Chiang ◽

Hau-Yan Lu ◽

Chen-Pang Kung ◽

Ting-Chang Chang

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Threshold Voltage ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Voltage Instability ◽

Hydrogenated Amorphous

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Characteristics of hydrogenated amorphous silicon thin film transistors fabricated by d.c. magnetron sputtering

Thin Solid Films ◽

10.1016/0040-6090(89)90805-5 ◽

1989 ◽

Vol 175 ◽

pp. 37-42 ◽

Cited By ~ 5

Author(s):

A. Kołodziej ◽

S. Nowak

Keyword(s):

Thin Film ◽

Magnetron Sputtering ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Temperature dependence of hydrogenated amorphous silicon thin-film transistors

Journal of Materials Science ◽

10.1007/bf01184569 ◽

1995 ◽

Vol 30 (9) ◽

pp. 2254-2256 ◽

Cited By ~ 9

Author(s):

Bor -Yir Chen ◽

Wei -Hsiung Wu ◽

Jiann -Ruey Chen ◽

Chum -Sam Hong

Keyword(s):

Thin Film ◽

Temperature Dependence ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Silicon Thin Film ◽

Hydrogenated Amorphous

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Two‐dimensional simulation of switch‐on speeds in hydrogenated amorphous silicon thin‐film transistors

Journal of Applied Physics ◽

10.1063/1.354263 ◽

1993 ◽

Vol 74 (8) ◽

pp. 5231-5240 ◽

Cited By ~ 3

Author(s):

J. S. Huang ◽

C. H. Wu

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Thin Film Transistors ◽

Hydrogenated Amorphous Silicon ◽

Two Dimensional ◽

Silicon Thin Film ◽

Dimensional Simulation ◽

Hydrogenated Amorphous

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