Quantum mechanical study of trapped charge relaxation characteristics in metal-oxide-semiconductor devices

Proceedings of IEEE. IEEE Region 10 Conference. TENCON 99. 'Multimedia Technology for Asia-Pacific Information Infrastructure' (Cat. No.99CH37030) ◽

10.1109/tencon.1999.818624 ◽

2003 ◽

Author(s):

Q.D. Mohd Khosru ◽

Md. Nasir Uddin ◽

M. Rezwan Khan

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Charge Relaxation ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Relaxation Characteristics ◽

Trapped Charge

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Quantum-mechanical study of the direct tunneling current in metal-oxide-semiconductor structures

Journal of Applied Physics ◽

10.1063/1.1985976 ◽

2005 ◽

Vol 98 (2) ◽

pp. 024506 ◽

Cited By ~ 6

Author(s):

E. P. Nakhmedov ◽

K. Wieczorek ◽

H. Burghardt ◽

C. Radehaus

Keyword(s):

Metal Oxide ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Semiconductor Structures ◽

Direct Tunneling ◽

Mechanical Study ◽

Quantum Mechanical Study ◽

Direct Tunneling Current

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Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

Communications in Theoretical Physics ◽

10.1088/0253-6102/54/4/33 ◽

2010 ◽

Vol 54 (4) ◽

pp. 763-767 ◽

Cited By ~ 8

Author(s):

Hu Guang-Xi ◽

Wang Ling-Li ◽

Liu Ran ◽

Tang Ting-Ao ◽

Qiu Zhi-Jun

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Study ◽

Surrounding Gate ◽

Quantum Mechanical Study

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Cited By ~ 3

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Dual‐transistor method to determine threshold‐voltage shifts due to oxide‐trapped charge and interface traps in metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.101854 ◽

1989 ◽

Vol 55 (5) ◽

pp. 466-468 ◽

Cited By ~ 25

Author(s):

D. M. Fleetwood

Keyword(s):

Metal Oxide ◽

Threshold Voltage ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Oxide Trapped Charge ◽

Trapped Charge

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Quantum Mechanical Determination of the Potential and Carrier Distributions in the Inversion Layer of Metal-Oxide-Semiconductor Devices

10.1515/9783112472927-012 ◽

1979 ◽

pp. 129-142

Author(s):

C. T. Hsing ◽

D. P. Kennedy ◽

A. D. Sutherland ◽

K. M. van Vliet

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical

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Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5094 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5094-5097 ◽

Cited By ~ 1

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

Gate Tunneling

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Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4496 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4496-4500 ◽

Cited By ~ 8

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Gate Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Modeling

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Quantum mechanical determination of the potential and carrier distributions in the inversion layer of metal—oxide—semiconductor devices

phys stat sol (a) ◽

10.1002/pssa.2210560113 ◽

1979 ◽

Vol 56 (1) ◽

pp. 129-141 ◽

Cited By ~ 35

Author(s):

C. T. Hsing ◽

D. P. Kennedy ◽

A. D. Sutherland ◽

K. M. van Vliet

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Inversion Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical

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Fully Quantum-Mechanical Calculation of Gate Tunneling Current in Ultrathin Silicon-on-Insulator Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.l600 ◽

2001 ◽

Vol 40 (Part 2, No. 6B) ◽

pp. L600-L602

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Gate Tunneling

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Carrier backscattering characteristics of nanoscale strained complementary metal-oxide-semiconductor devices featuring the optimal stress engineering

Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena ◽

10.1116/1.3125275 ◽

2009 ◽

Vol 27 (3) ◽

pp. 1261

Author(s):

Shu-Tong Chang ◽

Ming-Han Liao ◽

Chang-Chun Lee ◽

Jacky Huang ◽

Wei-Ching Wang ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Stress Engineering

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