Design and optimization of high efficiency GaN HEMT class-E power amplifiers

TENCON 2015 - 2015 IEEE Region 10 Conference ◽

10.1109/tencon.2015.7372951 ◽

2015 ◽

Author(s):

Tomasz A. Filipek

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Design And Optimization ◽

Gan Hemt ◽

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High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

2010 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2010.5514928 ◽

2010 ◽

Author(s):

V. Zomorrodian ◽

Y. Pei ◽

U. K. Mishra ◽

R. A. York

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Gan Hemt ◽

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High-efficiency class E MMIC power amplifiers at 4.0 GHz using AlGaN/GaN HEMT technology

2010 IEEE MTT-S International Microwave Symposium ◽

10.1109/mwsym.2010.5514695 ◽

2010 ◽

Author(s):

Valiallah Zomorrodian ◽

Yi Pei ◽

Umesh K. Mishra ◽

Robert A. York

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Gan Hemt ◽

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6 High-Efficiency Broadband Class-E Power Amplifiers

Broadband RF and Microwave Amplifiers ◽

10.1201/b19053-7 ◽

2015 ◽

pp. 489-544

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

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Modeling of High Frequency and High Efficiency GaN HEMT Power Amplifiers Based on the Developed Transistor Model (EEHEMT)

2019 IEEE Conference of Russian Young Researchers in Electrical and Electronic Engineering (EIConRus) ◽

10.1109/eiconrus.2019.8657314 ◽

2019 ◽

Author(s):

Myo Min Thant ◽

Vitaly A. Romanjuk ◽

Lwin Moe Khaing ◽

Naing Htun Lin ◽

Nikolai V. Guminov

Keyword(s):

Power Amplifiers ◽

High Frequency ◽

High Efficiency ◽

Gan Hemt ◽

Transistor Model

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Class E high-efficiency power amplifiers, from HF to microwave

1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192) ◽

10.1109/mwsym.1998.705187 ◽

2002 ◽

Author(s):

N.O. Sokal

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

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High power, high efficiency stacked mmWave Class-E-like power amplifiers in 45nm SOI CMOS

Proceedings of the IEEE 2012 Custom Integrated Circuits Conference ◽

10.1109/cicc.2012.6330562 ◽

2012 ◽

Author(s):

Anandaroop Chakrabarti ◽

Harish Krishnaswamy

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Soi Cmos ◽

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A high‐efficiency design for 2.0‐2.9 GHz 5‐W GaN HEMT Class‐E power amplifier using passive Q‐constant non‐Foster network

Microwave and Optical Technology Letters ◽

10.1002/mop.32068 ◽

2019 ◽

Vol 62 (2) ◽

pp. 615-624 ◽

Author(s):

Dang‐An Nguyen ◽

Chulhun Seo ◽

Kwang S. Park

Keyword(s):

Power Amplifier ◽

High Efficiency ◽

Gan Hemt ◽

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High-Efficiency Class-E-Cells-Based GaN HEMT Doherty Amplifier for WCDMA Applications

2008 38th European Microwave Conference ◽

10.1109/eumc.2008.4751480 ◽

2008 ◽

Author(s):

Yong-Sub Lee ◽

Mun-Woo Lee ◽

Yoon-Ha Jeong

Keyword(s):

High Efficiency ◽

Gan Hemt ◽

Doherty Amplifier ◽

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Low voltage, high efficiency GaAs Class E power amplifiers for wireless transmitters

IEEE Journal of Solid-State Circuits ◽

10.1109/4.466076 ◽

1995 ◽

Vol 30 (10) ◽

pp. 1074-1080 ◽

Author(s):

T. Sowlati ◽

C.A.T. Salama ◽

J. Sitch ◽

G. Rabjohn ◽

D. Smith

Keyword(s):

Power Amplifiers ◽

High Efficiency ◽

Low Voltage ◽

Wireless Transmitters ◽

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Class-E High-Efficiency RF/Microwave Power Amplifiers: Principles of Operation, Design Procedures, and Experimental Verification

Analog Circuit Design ◽

10.1007/0-306-47950-8_14 ◽

2003 ◽

pp. 269-301 ◽

Author(s):

Nathan O. Sokal

Keyword(s):

Experimental Verification ◽

Power Amplifiers ◽

Microwave Power ◽

High Efficiency ◽

Design Procedures ◽

Microwave Power Amplifiers ◽

Class E ◽

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