Total Dose Effects on a FD-SOI Technology for Monolithic Pixel Sensors

2010 ◽  
Vol 57 (4) ◽  
pp. 2135-2141 ◽  
Author(s):  
Serena Mattiazzo ◽  
Marco Battaglia ◽  
Dario Bisello ◽  
Devis Contarato ◽  
Peter Denes ◽  
...  
Keyword(s):  
Total Dose ◽  
Pixel Sensors ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Soi Technology

Total dose effects on a FD-SOI technology for monolithic pixel sensors

2009 ◽  
Author(s):  
Marco Battaglia ◽  
Dario Bisello ◽  
Devis Contarato ◽  
Peter Denes ◽  
Piero Giubilato ◽  
...  
Keyword(s):  
Total Dose ◽  
Pixel Sensors ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Soi Technology

High total dose effects on CMOS/SOI technology

2002 ◽  
Author(s):  
O. Flament ◽  
E. Dupont-Nivet ◽  
J.L. Leray ◽  
J.F. Pere ◽  
E. Delagnes ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Soi Technology ◽  
High Total Dose

High total dose effects on CMOS/SOI technology

1992 ◽  
Vol 39 (3) ◽  
pp. 376-380 ◽  
Author(s):  
O. Flament ◽  
E. Dupont-Nivet ◽  
J.L. Leray ◽  
J.F. Pere ◽  
E. Delagnes ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects ◽  
Soi Technology ◽  
High Total Dose

scholarly journals Total Dose Effects on 4H-SiC Bipolar Junction Transistors

2017 ◽  
Vol 897 ◽  
pp. 579-582
Author(s):  
Sethu Saveda Suvanam ◽  
Luigia Lanni ◽  
Bengt Gunnar Malm ◽  
Carl Mikael Zetterling ◽  
Anders Hallén
Keyword(s):  
Total Dose ◽  
Detailed Analysis ◽  
Surface Recombination ◽  
Current Gain ◽  
Bipolar Junction Transistors ◽  
Displacement Damage ◽  
Base Current ◽  
Dose Effects ◽  
Order Of Magnitude ◽  
Total Dose Effects

In this work, total dose effects on 4H-SiC bipolar junction transistors (BJT) are investigated. Three 4H-SiC NPN BJT chips are irradiated with 3MeV protons with a dose of 1×1011, 1×1012 and 1×1013 cm-2, respectively. From the measured reciprocal current gain it is observed that 4H-SiC NPN BJT exposed to protons suffer both displacement damage and ionization, whereas, a traditional Si BJT suffers mainly from displacement damage. Furthermore, bulk damage introduction rates for SiC BJT were extracted to be 3.3×10-15 cm2, which is an order of magnitude lower compared to reported Si values. Finally, from detailed analysis of the base current at low injection levels, it is possible to distinguish when surface recombination leakage is dominant over bulk recombination.

Total Dose Effects in the 54HC Family of Microcircuits

1984 ◽  
Vol 31 (6) ◽  
pp. 1358-1363 ◽  
Author(s):  
Stan Ropiak ◽  
Kusum Sahu ◽  
Dave Cleveland
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects

(Invited) Total Dose Effects and Single Event Upsets During Radiation Damage of GaN and SiC

2021 ◽  
Vol 104 (7) ◽  
pp. 13-34
Author(s):  
Ani Khachatrian ◽  
Adrian Ildefonso ◽  
Zahabul Islam ◽  
Md Abu Jafar Rasel ◽  
Amanul Haque ◽  
...  
Keyword(s):  
Total Dose ◽  
Radiation Damage ◽  
Single Event ◽  
Single Event Upsets ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects on the matching properties of deep submicron MOS transistors

2014 ◽  
Vol 35 (6) ◽  
pp. 064007 ◽  
Author(s):  
Yuxin Wang ◽  
Rongbin Hu ◽  
Ruzhang Li ◽  
Guangbing Chen ◽  
Dongbing Fu ◽  
...  
Keyword(s):  
Total Dose ◽  
Deep Submicron ◽  
Mos Transistors ◽  
Dose Effects ◽  
Total Dose Effects

Total dose effects in the auger transistor

2002 ◽  
Author(s):  
Dmitry V. Gromov ◽  
Vadim V. Elesin ◽  
Aledxander Y. Nikiforov ◽  
Stanislav A. Polevich ◽  
Yury F. Adamov ◽  
...  
Keyword(s):  
Total Dose ◽  
Dose Effects ◽  
Total Dose Effects
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