Gate-all-arround single-crystalline silicon nanowire optical sensor

Author(s):  
M. Ziaei-Moayyed ◽  
B. Draper ◽  
M. Okandan
2009 ◽  
Vol 156 (5) ◽  
pp. K77 ◽  
Author(s):  
Enrique A. Dalchiele ◽  
Francisco Martín ◽  
Dietmar Leinen ◽  
Ricardo E. Marotti ◽  
José Ramón Ramos-Barrado

Nano Letters ◽  
2016 ◽  
Vol 16 (11) ◽  
pp. 6960-6966 ◽  
Author(s):  
Alon Kosloff ◽  
Omri Heifler ◽  
Eran Granot ◽  
Fernando Patolsky

2011 ◽  
Vol 26 (9) ◽  
pp. 1091-1099 ◽  
Author(s):  
Ana Cuevas ◽  
Enrique Ariel Dalchiele ◽  
Ricardo Marotti ◽  
Dietmar Leinen ◽  
José Ramón Ramos-Barrado ◽  
...  

Abstract


2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Yunshan Zhao ◽  
Xiangjun Liu ◽  
Ashutosh Rath ◽  
Jing Wu ◽  
Baowen Li ◽  
...  

Author(s):  
Inkyu Park ◽  
Zhiyong Li ◽  
Albert P. Pisano ◽  
R. Stanley Williams

In this paper, we present numerical and experimental studies on the nanoscale Joule heating along the single crystalline silicon nanowires. 50–100nm wide single crystalline silicon nanowires are heated via Joule heating by applying an electrical potential across them. Numerical simulation result predicts an extremely localized temperature field by resistive heating of silicon nanowire. We experimentally verified this highly localized heating of silicon nanowires by AFM imaging of localized thermal ablation of polytetrafluoroethylene (PTFE) thin film. This result implies potential applications of silicon nanowires as nanoscale heaters for the generation of highly localized temperature fields.


2010 ◽  
Vol 114 (9) ◽  
pp. 3798-3803 ◽  
Author(s):  
V. A. Sivakov ◽  
G. Brönstrup ◽  
B. Pecz ◽  
A. Berger ◽  
G. Z. Radnoczi ◽  
...  

Author(s):  
Gudrun Andra ◽  
Matthias Pietsch ◽  
Thomas Stelzner ◽  
Annett Gawlik ◽  
Ekkehart Ose ◽  
...  

2009 ◽  
Vol 93 (5) ◽  
pp. 621-624 ◽  
Author(s):  
Jing-Shun Huang ◽  
Chieh-Yu Hsiao ◽  
Shu-Jia Syu ◽  
Jiun-Jie Chao ◽  
Ching-Fuh Lin

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