scholarly journals Compact modeling of intrinsic capacitances in Double-Gate Tunnel-FETs

2017 ◽  
Author(s):  
A. Farokhnejad ◽  
M. Graef ◽  
F. Horst ◽  
C. Liu ◽  
Q.T. Zhao ◽  
...  
Keyword(s):  
Compact Modeling ◽  
Double Gate ◽  
Tunnel Fets

Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 ◽  
Author(s):  
Sanjay Kumar ◽  
Kamlaksha Baral ◽  
Sweta Chander ◽  
P. K. Singh ◽  
Kunal Singh ◽  
...  
Keyword(s):  
Drain Current ◽  
Double Gate ◽  
Interface Charges ◽  
Tunnel Fets ◽  
Dual Material

Compact modeling of quantum effects in symmetric double-gate MOSFETs

2010 ◽  
Vol 41 (10) ◽  
pp. 688-692 ◽  
Author(s):  
Wei Wang ◽  
Huaxin Lu ◽  
Jooyoung Song ◽  
Shih-Hsien Lo ◽  
Yuan Taur
Keyword(s):  
Quantum Effects ◽  
Compact Modeling ◽  
Double Gate

Compact modeling of subthreshold swing in double gate and nanowire MOSFETs, for Si and GaAs channel materials

2015 ◽  
Vol 111 ◽  
pp. 188-195 ◽  
Author(s):  
G. Hiblot ◽  
Q. Rafhay ◽  
F. Boeuf ◽  
G. Ghibaudo
Keyword(s):  
Subthreshold Swing ◽  
Compact Modeling ◽  
Double Gate ◽  
Nanowire Mosfets

Analytical compact modeling framework for the 2D electrostatics in lightly doped double-gate MOSFETs

2012 ◽  
Vol 69 ◽  
pp. 72-84 ◽  
Author(s):  
Mike Schwarz ◽  
Thomas Holtij ◽  
Alexander Kloes ◽  
Benjamín Iñíguez
Keyword(s):  
Compact Modeling ◽  
Double Gate ◽  
Modeling Framework

Circuit speed oriented device design scheme for GaAsSb/InGaAs double-gate hetero-junction tunnel FETs

2020 ◽  
Vol 59 (SG) ◽  
pp. SGGA06
Author(s):  
Koichi Fukuda ◽  
Naoya Nogami ◽  
Shogo Kunisada ◽  
Yasuyuki Miyamoto
Keyword(s):  
Double Gate ◽  
Device Design ◽  
Design Scheme ◽  
Tunnel Fets
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