Characterization and thermoluminescence study of gamma irradiated Tb-doped ZnO and undoped ZnO synthesized by spray pyrolysis method

High gamma dose-resistant undoped ZnO and Tb-doped ZnO thermoluminescent (TL) micro-phosphors were prepared by the spray pyrolysis method. Scanning electron microscopy shows crystalline rods with hexagonal morphology, (0.1-0.4 µm diameter, and about 1 µm length). Raman spectra dispersion reveals a würtzite form. Photoluminescence (PL) study of irradiated zinc oxide films indicates the generation of defects produced by gamma irradiation resulting in an increased probability of electron-hole exciton recombination. PL spectrum shows emission bands from 5D4-7Fj=6,5,4,3 transitions ascribed to Tb3+ dopant in zinc oxide phosphor. X-ray diffraction patterns for both types of films growth (undoped ZnO and Tb-doped ZnO) are typical of zinc oxide crystalline structure, with no noticeable effect of Tb ions. Dosimetric properties, for both samples, show a low TL fading signal and TL reproducibility signal for undoped ZnO and Tb-doped ZnO samples was 29 and 57 %, respectively. The kinetic parameters such as activation energy E, frequency factor s, and Rm values, were obtained by Computerized Glow Curve Deconvolution (CGCD) assuming Mixed Order Kinetic model (MOK). The results show that the MOK well described the glow curves of zinc oxide films. The heating rate effects produced a broadening of glow peak located at 420 K. For purposes like radiation detector, atomic effective number (Zeff) was obtained: 27.74 and 56.47 for undoped ZnO and Tb-doped ZnO samples, respectively. The samples were exposed to gamma radiation in a wide range of 0.25–20 kGy dose. TL properties of undoped ZnO and Tb-doped ZnO samples show that these materials could be used to detect high doses in a gamma radiation field.

ZnO thin-film optimization towards the fabrication of high-frequency ultrasound transducers

<p>Zinc oxide is a popular wide bandgap semiconductor material with versatile electrical and optical properties. In its wurtzite crystal form, this semiconductor is piezoelectric, and has material properties that make it an attractive candidate for fabricating high frequency ultrasound transducers. This thesis describes the development of an RF sputtering process for creating zinc oxide films with thicknesses ranging from 3μm to 10μm, aiming for transducer frequencies of 300MHz to 1 GHz. Sputtering parameters are optimized to meet the dual requirements of a c-axis film orientation while maintaining a high deposition rate. These constraints and the dimensional characteristics of the utilized sputtering system, such as the short substrate-to-target distance, introduce high levels of strain in the deposited zinc oxide films. Various anneal procedures are developed to reduce film strain and optimize the resulting microstructure. It is found that annealing temperatures > 600°C eliminate the inherent film strain, but simultaneously result in the dewetting of the bottom metal contact, making this thermal treatment unsuitable for device processing. As an alternative to traditional metal contacts used in ultrasound transducers, the use of highly doped zinc oxide contacts is then investigated. It is shown that aluminium doped zinc oxide contacts provide an improved seed layer for device growth while eliminating the dewetting problems associated with metal contacts at high anneal temperatures. In addition, the use of such transparent conductive oxide contacts can lead to novel ultrasound applications, which benefit from the integration of optical and acoustic imaging in a single lens. A proof of concept all-zinc oxide single element ultrasound transducer structure is finally fabricated, to highlight the potential of an integrated optical-acoustic lens design.</p>

ZnO thin-film optimization towards the fabrication of high-frequency ultrasound transducers

<p>Zinc oxide is a popular wide bandgap semiconductor material with versatile electrical and optical properties. In its wurtzite crystal form, this semiconductor is piezoelectric, and has material properties that make it an attractive candidate for fabricating high frequency ultrasound transducers. This thesis describes the development of an RF sputtering process for creating zinc oxide films with thicknesses ranging from 3μm to 10μm, aiming for transducer frequencies of 300MHz to 1 GHz. Sputtering parameters are optimized to meet the dual requirements of a c-axis film orientation while maintaining a high deposition rate. These constraints and the dimensional characteristics of the utilized sputtering system, such as the short substrate-to-target distance, introduce high levels of strain in the deposited zinc oxide films. Various anneal procedures are developed to reduce film strain and optimize the resulting microstructure. It is found that annealing temperatures > 600°C eliminate the inherent film strain, but simultaneously result in the dewetting of the bottom metal contact, making this thermal treatment unsuitable for device processing. As an alternative to traditional metal contacts used in ultrasound transducers, the use of highly doped zinc oxide contacts is then investigated. It is shown that aluminium doped zinc oxide contacts provide an improved seed layer for device growth while eliminating the dewetting problems associated with metal contacts at high anneal temperatures. In addition, the use of such transparent conductive oxide contacts can lead to novel ultrasound applications, which benefit from the integration of optical and acoustic imaging in a single lens. A proof of concept all-zinc oxide single element ultrasound transducer structure is finally fabricated, to highlight the potential of an integrated optical-acoustic lens design.</p>

Fabrication of Highly Porous and Pure Zinc Oxide Films Using Modified DC Magnetron Sputtering and Post-Oxidation

Porous films of metals and metal oxides exhibit larger surface areas and higher reactivities than those of dense films. Therefore, they have gained growing attention as potential materials for use in various applications. This study reports the use of a modified direct current magnetron sputtering method to form porous Zn-ZnO composite films, wherein a subsequent wet post-oxidation process is employed to fabricate pure porous ZnO films. The porous Zn-ZnO composite films were initially formed in clusters, and evaluation of their resulting properties allowed the optimal conditions to be determined. An oxygen ratio of 0.3% in the argon gas flow resulted in the best porosity, while a process pressure of 14 mTorr was optimal. Following deposition, porous ZnO films were obtained through rapid thermal annealing in the presence of water vapor, and the properties and porosities of the obtained films were analyzed. An oxidation temperature of 500 °C was optimal, with an oxidation time of 5 min giving a pure ZnO film with 26% porosity. Due to the fact that the films produced using this method are highly reliable, they could be employed in applications that require large specific surface areas, such as sensors, supercapacitors, and batteries.