Molecular dynamics and quasidynamics simulations of the annealing of bulk and near‐surface interstitials formed in molecular‐beam epitaxial Si due to low‐energy particle bombardment during deposition

1991 ◽  
Vol 9 (1) ◽  
pp. 91-97 ◽  
Author(s):  
M. Kitabatake ◽  
P. Fons ◽  
J. E. Greene
Keyword(s):  
Molecular Dynamics ◽  
Particle Bombardment ◽  
Molecular Beam ◽  
Low Energy ◽  
Energy Particle ◽  
Near Surface ◽  
Molecular Beam Epitaxial

Deposition of Ge1-xCxAlloy on Si by Combined Low-Energy Ion Beam and Molecular Beam Epitaxial Method

1999 ◽  
Vol 38 (Part 1, No. 6A) ◽  
pp. 3459-3465 ◽  
Author(s):  
Hajime Shibata ◽  
Shinji Kimura ◽  
Paul Fons ◽  
Akimasa Yamada ◽  
Akira Obara ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Ion Beam ◽  
Low Energy ◽  
Molecular Beam Epitaxial

Surface and Near-Surface Atom Dynamics During Low Energy Xe Ion Bombardment of Si and Fcc Surfaces

1990 ◽  
Vol 193 ◽  
Author(s):  
M. V. R. Murty ◽  
H. S. Lee ◽  
Harry A. Atwater
Keyword(s):  
Molecular Dynamics ◽  
Surface Layer ◽  
Ion Bombardment ◽  
Low Energy ◽  
Surface Processes ◽  
Defect Production ◽  
Near Surface ◽  
Qualitative Nature ◽  
Dynamics Simulations ◽  
Atom Dynamics

ABSTRACTSurface and near-surface processes have been studied during low energy Xe ion bombardment of Si (001) and fcc surfaces using molecular dynamics simulations. Defect production is enhanced near the surface of smooth Si (001) surfaces with respect to the bulk in the energy range 20–150 eV, but is not confined exclusively to the surface layer. The extent and qualitative nature of bombardment-induced dissociation of small fcc islands on an otherwise smooth fcc (001) surface is found to depend strongly on island cohesive energy.

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