Characterization of helicon wave plasma for a thin film deposition process

1997 ◽  
Vol 15 (2) ◽  
pp. 307-312 ◽  
Author(s):  
Seon-Hyo Kim ◽  
Ig-Hyeon Kim ◽  
Ki-Sung Kim
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Helicon Wave ◽  
Helicon Wave Plasma

Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

1988 ◽  
Vol 46 ◽  
pp. 866-867
Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Superconducting Films ◽  
Electron Beam Evaporation ◽  
Film Deposition ◽  
Silicon Substrates ◽  
Superconducting Properties ◽  
Sequential Electron ◽  
Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

scholarly journals Description and characterization of a ECR plasma device developed for thin film deposition

2003 ◽  
Vol 33 (1) ◽  
pp. 123-127 ◽  
Author(s):  
J.A.S. da Matta ◽  
R.M.O. Galvão ◽  
L. Ruchko ◽  
M.C.A. Fantini ◽  
P.K. Kiyohara
Keyword(s):  
Thin Film ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Ecr Plasma ◽  
Plasma Device

Characterization of step-edge barrier crossing of para-sexiphenyl on the ZnO (101̄0) surface

2016 ◽  
Vol 18 (36) ◽  
pp. 25329-25341 ◽  
Author(s):  
Karol Palczynski ◽  
Philipp Herrmann ◽  
Georg Heimel ◽  
Joachim Dzubiella
Keyword(s):  
Thin Film ◽  
Mass Transport ◽  
Organic Molecules ◽  
Optoelectronic Devices ◽  
Thin Film Deposition ◽  
Essential Elements ◽  
Transport Processes ◽  
Film Deposition ◽  
Conjugated Organic Molecules

Mass transport processes of conjugated organic molecules (COMs) on inorganic surfaces are essential elements in thin film deposition for hybrid optoelectronic devices.

Spray Pyrolysis Thin Film Deposition Technique for Micro-Sensors and Devices

2020 ◽  
pp. 178-202
Author(s):  
Monoj Kumar Singha ◽  
Vineet Rojwal
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Deposition Technique ◽  
Uv Photodetector ◽  
Spray Process ◽  
Spray Pyrolysis Deposition ◽  
Deposition Techniques

Thin film is used for sensing and electronic devices applications. Various techniques are used for thin film deposition. This chapter presents the Spray pyrolysis deposition technique used for the growth of thin films sensing and device material. Spray pyrolysis is an inexpensive method to grow good crystalline thin film compared to other thin film deposition techniques. The chapter gives an overview of the spray process used for thin film deposition. Basic setup for this process is explained. Parameters affecting the deposition process is explained, as are the various spray methods. Finally, some examples of spray pyrolysis in different applications like a gas sensor, UV photodetector, solar cell, photocatalysis, and supercapacitor are discussed.

Sol–gel thin film deposition and characterization of a new optically active compound: Er2Ti2O7

2001 ◽  
Vol 16 (4) ◽  
pp. 463-473 ◽  
Author(s):  
M. Langlet ◽  
C. Coutier ◽  
J. Fick ◽  
M. Audier ◽  
W. Meffre ◽  
...  
Keyword(s):  
Thin Film ◽  
Active Compound ◽  
Sol Gel ◽  
Thin Film Deposition ◽  
Optically Active ◽  
Film Deposition

The Simulation of Polycrystalline Silicon Thin Film Deposition in PECVD System

2011 ◽  
Vol 189-193 ◽  
pp. 2032-2036 ◽  
Author(s):  
Zhi Jian Wang ◽  
Xiao Feng Shang
Keyword(s):  
Thin Film ◽  
Deposition Rate ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Thin Film Deposition ◽  
Deposition Process ◽  
Film Deposition ◽  
Main Reaction ◽  
Silicon Thin Film ◽  
Simulation Results

Taking Silicon tetrachloride (SiCl4) and hydrogen (H2) as the reaction gas, by the method of plasma-enhanced chemical vapor deposition (PECVD), this paper simulates the deposition process of polycrystalline silicon thin film on the glass substrates in the software FLUENT. Three dimensional physical model and mathematics model of the simulated area are established. The reaction mechanism including main reaction equation and several side equations is given during the simulation process. The simulation results predict the velocity field, temperature distribution, and concentration profiles in the PECVD reactor. The simulation results show that the deposition rate of silicon distribution is even along the circumference direction, and gradually reduced along the radius direction. The deposition rate is about 0.005kg/(m2•s) at the center. The simulated result is basically consistent with the practical one. It means that numerical simulation method to predict deposition process is feasible and the results are reliable in PECVD system.

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