Electrical properties and surface morphology of heteroepitaxial-grown tin-doped indium oxide thin films deposited by molecular-beam epitaxy

2000 ◽  
Vol 18 (4) ◽  
pp. 1663-1667 ◽  
Author(s):  
Naoaki Taga ◽  
Yuzo Shigesato ◽  
Masayuki Kamei
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Indium Oxide ◽  
Molecular Beam ◽  
Oxide Thin Films

Electrical properties of tin-doped indium oxide thin films prepared by a dip coating

2012 ◽  
Vol 38 ◽  
pp. S613-S616 ◽  
Author(s):  
Y. Seki ◽  
Y. Sawada ◽  
M.H. Wang ◽  
H. Lei ◽  
Y. Hoshi ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Dip Coating ◽  
Oxide Thin Films

Optical, structural, and electrical properties of indium oxide thin films prepared by the sol-gel method

1997 ◽  
Vol 82 (2) ◽  
pp. 865-870 ◽  
Author(s):  
Radhouane Bel Hadj Tahar ◽  
Takayuki Ban ◽  
Yutaka Ohya ◽  
Yasutaka Takahashi
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Sol Gel ◽  
Oxide Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Structural And Electrical Properties

Structure and surface morphology of highly conductive RuO2 films grown on MgO by oxygen-plasma-assisted molecular beam epitaxy

1997 ◽  
Vol 12 (7) ◽  
pp. 1844-1849 ◽  
Author(s):  
Y. Gao ◽  
G. Bai ◽  
Y. Liang ◽  
G. C. Dunham ◽  
S. A. Chambers
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Surface Morphology ◽  
Oxygen Plasma ◽  
Molecular Beam ◽  
Substrate Surface ◽  
Epitaxial Films ◽  
Low Resistivity ◽  
Small Grains

Metallic RuO2(110) thin films were grown by oxygen-plasma-assisted molecular beam epitaxy (MBE) on MgO(100) and (110) at 425 °C. RuO2 films on MgO(100) are epitaxial with two variants, while RuO2 films on MgO(110) are highly oriented with the (110) face parallel to the substrate surface. The two variants in the RuO2(110) epitaxial films resulted in a twofold mosaic microstructure. The RuO2(110) epitaxial films are very smooth and exhibit a low resistivity of ∼ 36 μΩ-cm. In contrast, the RuO2(110) textured films are very rough, and consist of small grains with a poor in-plane alignment. A slight higher resistivity (49 μΩ-cm) was found for the RuO2 (110) textured films grown on MgO(110).

Electrical Properties of Indium-Oxide Thin Films Produced by Plasma-Enhanced Reactive Thermal Evaporation

2018 ◽  
Vol 52 (12) ◽  
pp. 1638-1641
Author(s):  
A. S. Ilin ◽  
A. N. Matsukatova ◽  
P. A. Forsh ◽  
Yu. Vygranenko
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Thermal Evaporation ◽  
Oxide Thin Films

Influence of air flow rate on structural and electrical properties of undoped indium oxide thin films

1993 ◽  
Vol 33 (3-4) ◽  
pp. 204-207 ◽  
Author(s):  
S. Mirzapour ◽  
S.M. Rozati ◽  
M.G. Takwale ◽  
B.R. Marathe ◽  
V.G. Bhide
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Indium Oxide ◽  
Flow Rate ◽  
Air Flow ◽  
Air Flow Rate ◽  
Oxide Thin Films ◽  
Structural And Electrical Properties
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