Nitrogen profiles of high dose, high temperature plasma source ion implantation treated austenitic stainless steel

Author(s):  
C. B. Franklyn
1993 ◽  
Vol 316 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
J.R. Conrad ◽  
S.B. Felch

ABSTRACTWe have used high resolution x-ray diffraction to analyze the structural changes that accompany boron doping of silicon by BF3 plasma source ion implantation (PSII). Triple crystal diffraction analysis of as-implanted PSII doped silicon showed little excess x-ray diffuse scattering, even when analyzed using the asymmetric (113) reflection for increased surface sensitivity. This result suggests that PSΠ is capable of providing high dose implantation with low damage. Annealing of the PSII-doped silicon showed the development of a compressive surface layer, indicated by enhanced x-ray scattering directed perpendicular to the surface. Virtually all of the scattering from the annealed samples was concentrated in the so-called “surface streak” which arises due to dynamical diffraction from the perfect crystal Si structure. Little if any diffuse scattering due to kinematic scattering from crystal defects was detected. These observations indicate that plasma source doping can be used to achieve both a shallow implant depth and an extremely uniform incorporation of boron into the silicon lattice.


2013 ◽  
Vol 228 ◽  
pp. 195-200 ◽  
Author(s):  
Bruno Bacci Fernandes ◽  
Rogério Moraes Oliveira ◽  
Mário Ueda ◽  
Samantha de Fátima Magalhães Mariano ◽  
Alfeu Saraiva Ramos ◽  
...  

1995 ◽  
Vol 396 ◽  
Author(s):  
D.J. Rej ◽  
N.V. Gavrilov ◽  
D. Emlin ◽  
I. Henins ◽  
K. Kern ◽  
...  

AbstractIon implantation experiments of C, N and O into stainless steel have been performed with beam-line and plasma source ion implantation methods. Acceleration voltages are varied between 27 and 50 kV, with pulsed ion current densities between 1 and 10 mA/cm2. Implanted doses range from 0.5 to 3×1018cm-2, while workpiece temperatures are maintained between 25 and 800°C. The implant concentration profiles, microstructure and surface mechanical properties of the implanted materials are reported.


2007 ◽  
Vol 201 (9-11) ◽  
pp. 4953-4956 ◽  
Author(s):  
M. Ueda ◽  
M.M. Silva ◽  
C.M. Lepienski ◽  
P.C. Soares ◽  
J.A.N. Gonçalves ◽  
...  

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