Influence of e-beam aperture angle on critical dimensions-scanning electron microscopes measurements for high aspect ratio structure

2019 ◽  
Vol 18 (02) ◽  
pp. 1
Author(s):  
Daisuke Bizen ◽  
Makoto Sakakibara
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Aperture Angle ◽  
Critical Dimensions ◽  
High Aspect Ratio Structure ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Beam Aperture ◽  
Scanning Electron

scholarly journals SEM Image Sharpness Analysis

1996 ◽  
Vol 4 (8) ◽  
pp. 18-19
Author(s):  
M.T. Postek ◽  
A.E. Vladar
Keyword(s):  
Image Sharpness ◽  
Critical Dimensions ◽  
Sem Image ◽  
Electron Microscopes ◽  
Automated Scanning ◽  
Automated Instrument ◽  
Scanning Electron Microscopes ◽  
Day By Day ◽  
Scanning Electron ◽  
Semiconductor Production

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at IMIST. The fundamentals and results are discussed in this paper.

Current State of Biological High-Resolution Scanning Electron Microscopy

1988 ◽  
Vol 46 ◽  
pp. 180-181 ◽  
Author(s):  
Klaus-Ruediger Peters
Keyword(s):  
High Performance ◽  
Low Voltage ◽  
Backscattered Electrons ◽  
Lens Position ◽  
Low Voltage Operation ◽  
Signal Collection ◽  
Probe Size ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

A new generation of high performance field emission scanning electron microscopes (FSEM) is now commercially available (JEOL 890, Hitachi S 900, ISI OS 130-F) characterized by an "in lens" position of the specimen where probe diameters are reduced and signal collection improved. Additionally, low voltage operation is extended to 1 kV. Compared to the first generation of FSEM (JE0L JSM 30, Hitachi S 800), which utilized a specimen position below the final lens, specimen size had to be reduced but useful magnification could be impressively increased in both low (1-4 kV) and high (5-40 kV) voltage operation, i.e. from 50,000 to 200,000 and 250,000 to 1,000,000 x respectively.At high accelerating voltage and magnification, contrasts on biological specimens are well characterized1 and are produced by the entering probe electrons in the outmost surface layer within -vl nm depth. Backscattered electrons produce only a background signal. Under these conditions (FIG. 1) image quality is similar to conventional TEM (FIG. 2) and only limited at magnifications >1,000,000 x by probe size (0.5 nm) or non-localization effects (%0.5 nm).

SEM image sharpness analysis

1996 ◽  
Vol 54 ◽  
pp. 142-143
Author(s):  
M. T. Postek ◽  
A. E. Vladar
Keyword(s):  
High Frequency ◽  
Low Frequency ◽  
Quantitative Information ◽  
Primary Electron ◽  
Image Sharpness ◽  
Critical Dimensions ◽  
Sem Image ◽  
Frequency Changes ◽  
Electron Microscopes ◽  
Scanning Electron

Fully automated or semi-automated scanning electron microscopes (SEM) are now commonly used in semiconductor production and other forms of manufacturing. The industry requires that an automated instrument must be routinely capable of 5 nm resolution (or better) at 1.0 kV accelerating voltage for the measurement of nominal 0.25-0.35 micrometer semiconductor critical dimensions. Testing and proving that the instrument is performing at this level on a day-by-day basis is an industry need and concern which has been the object of a study at NIST and the fundamentals and results are discussed in this paper.In scanning electron microscopy, two of the most important instrument parameters are the size and shape of the primary electron beam and any image taken in a scanning electron microscope is the result of the sample and electron probe interaction. The low frequency changes in the video signal, collected from the sample, contains information about the larger features and the high frequency changes carry information of finer details. The sharper the image, the larger the number of high frequency components making up that image. Fast Fourier Transform (FFT) analysis of an SEM image can be employed to provide qualitiative and ultimately quantitative information regarding the SEM image quality.

Observation of GaAs/AlAs Superlattice Structures in both Secondary and Backscattcred Electron Imaging Modes with an Ultrahigh Resolution Scanning Electron Microscope

1990 ◽  
Vol 48 (1) ◽  
pp. 404-405
Author(s):  
K. Ogura ◽  
A. Ono ◽  
S. Franchi ◽  
P.G. Merli ◽  
A. Migliori
Keyword(s):  
Gaas Layer ◽  
Objective Lens ◽  
Superlattice Structure ◽  
Backscattered Electron ◽  
Instrumental Resolution ◽  
Electron Microscopes ◽  
Superlattice Structures ◽  
Electron Imaging ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

In the last few years the development of Scanning Electron Microscopes (SEM), equipped with a Field Emission Gun (FEG) and using in-lens specimen position, has allowed a significant improvement of the instrumental resolution . This is a result of the fine and bright probe provided by the FEG and by the reduced aberration coefficients of the strongly excited objective lens. The smaller specimen size required by in-lens instruments (about 1 cm, in comparison to 15 or 20 cm of a conventional SEM) doesn’t represent a serious limitation in the evaluation of semiconductor process techniques, where the demand of high resolution is continuosly increasing. In this field one of the more interesting applications, already described (1), is the observation of superlattice structures.In this note we report a comparison between secondary electron (SE) and backscattered electron (BSE) images of a GaAs / AlAs superlattice structure, whose cross section is reported in fig. 1. The structure consist of a 3 nm GaAs layer and 10 pairs of 7 nm GaAs / 15 nm AlAs layers grown on GaAs substrate. Fig. 2, 3 and 4 are SE images of this structure made with a JEOL JSM 890 SEM operating at an accelerating voltage of 3, 15 and 25 kV respectively. Fig. 5 is a 25 kV BSE image of the same specimen. It can be noticed that the 3nm layer is always visible and that the 3 kV SE image, in spite of the poorer resolution, shows the same contrast of the BSE image. In the SE mode, an increase of the accelerating voltage produces a contrast inversion. On the contrary, when observed with BSE, the layers of GaAs are always brighter than the AlAs ones , independently of the beam energy.

Discoasters of the Blue Clay (Middle Miocene) of Malta and Gozo

1978 ◽  
Vol 115 (1) ◽  
pp. 1-19 ◽  
Author(s):  
Minoo Hojjatzadeh
Keyword(s):  
Middle Miocene ◽  
The Family ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

SummaryTwenty-three species of the Family Discoasteraceae Vekshina, 1959 recovered from 18 samples of the Blue Clay at Fort Chambray, Gozo, and 31 samples from Fomm-Ir-Rih Bay, Malta, have been studied under light and scanning electron microscopes. Fourteen Middle Miocene species are reviewed, their stratigraphical ranges and importance as marker species discussed. Nine species are described as new. On the basis of the discoaster species present, a Middle Miocene age (NN.6 Discoaster exilis Zone – NN.7 Discoaster kugleri Zone) for the Blue Clay in Malta and Gozo is suggested.

scholarly journals Ultrastructure of cleistothecia and the stages of life cycle of Microsphaera palczewskii by scanning electron microscope

2014 ◽  
Vol 32 (2) ◽  
pp. 275-278
Author(s):  
Joanna Z. Kadłubowska ◽  
Ewa Kalinowska-Kucharska
Keyword(s):  
Electron Microscope ◽  
Life Cycle ◽  
Scanning Electron Microscope ◽  
Scanning Microscopy ◽  
Developmental Cycle ◽  
Central Poland ◽  
Caragana Arborescens ◽  
Electron Microscopes ◽  
Scanning Electron Microscopes ◽  
Scanning Electron

Several year long investigations of the developmental cycle of <i>Microsphaera palczewskii</i> occurring on the leaves of <i>Caragana arborescens</i> in Central Poland are reported. The material was studied with light and scanning electron microscopes. The scanning microscopy micrographs of the clistothecia and appendages presented in this report are the first micrographs of this species.

Sign in / Sign up

Export Citation Format

Share Document