Abstract
This paper presents a study of the use of silicon Si for element base manufacture of micro- and nanoelectronics by using combined methods of focused ion beams and atomic layer plasma chemical etching. This technology makes it possible to modify surface of Si substrates in the required topology and geometry, followed by removal of atoms to obtain nanoscale elements. The influence of parameters of method of focused ion beams and plasma chemical etching on parameters of the formed structures is analyzed. So, for example, for formation of structures with maximum roughness, it is necessary to increase values of parameters responsible for reactive ion etching, these are such parameters as: the power of capacitive plasma source, the mixing voltage, and the flow rate of an inert gas (argon).
Grazing-incidence X-ray diffraction measurements on single GaAs nanowires (NWs) grown on a (111)-oriented GaAs substrate by molecular beam epitaxy are reported. The positions of the NWs are intentionally determined by a direct implantation of Au with focused ion beams. This controlled arrangement in combination with a nanofocused X-ray beam allows the in-plane lattice parameter of single NWs to be probed, which is not possible for randomly grown NWs. Reciprocal space maps were collected at different heights along the NW to investigate the crystal structure. Simultaneously, substrate areas with different distances from the Au-implantation spots below the NWs were probed. Around the NWs, the data revealed a 0.4% decrease in the lattice spacing in the substrate compared with the expected unstrained value. This suggests the presence of a compressed region due to Au implantation.
This paper presents the data for frequency trimming of the single port STW resona-tors in a frequency range of 500–1000 MHz by plasma chemical etching method. The main parameters of resonators after frequency trimming are given: frequency tolerance <±100·10–6, quality factor of 8600–9500, equivalent elements needed for use of the STW resonators.
. The calculation of nominal values of the matching device for the modified plasma chemical etching installation "Plasma 600T" was based on the estimated values of the discharge impedance (plasma). It turned out that for optimal performance, one can use a matching device consisting of two capacitors whose capacitances are: С1 [20; 1000] pF, С2 [4; 100] pF, and inductor with inductance 2,5 μH.
Plasma surface treatment of local modify silicon plates