Effects of thickness and substrate temperature on the electrical and optical properties of In 2 O 3 -ZnO films

2009 ◽  
Author(s):  
Yu Pei ◽  
Fachun Lai ◽  
Limei Lin ◽  
Liqin Fan ◽  
Yan Qu ◽  
...  
2001 ◽  
Vol 4 (6) ◽  
pp. 617-620 ◽  
Author(s):  
X.L. Xu ◽  
S.P. Lau ◽  
J.S. Chen ◽  
Z. Sun ◽  
B.K. Tay ◽  
...  

2011 ◽  
Vol 287-290 ◽  
pp. 2308-2313 ◽  
Author(s):  
Yi Hua Sun ◽  
Chen Hui Li ◽  
Wei Hao Xiong ◽  
Cai Hua Huang

Transparent conducting aluminum-doped zinc oxide (AZO) films have been prepared on soda-lime glass substrates by radio frequency magnetron sputtering using a high density ceramic target at different substrate temperatures. The structural, morphology, electrical, and optical properties of the AZO thin films were investigated by X-ray diffraction, scanning electron microscope, Hall measurement, and optical transmission spectroscopy, and which were strongly influenced by substrate temperatures. Films with better texture, higher transmission, lower resistivity and larger carrier concentration were obtained for the samples fabricated at higher substrate temperature. The AZO film with the lowest resistivity of 4.63×10−4 Ω.cm and an average optical transmission of 92% in the visible range was deposited on the substrate heated at 450 °C. The optical bandgap depends on the deposition condition, and was in the range of 3.35~3.59 eV.


2012 ◽  
Vol 557-559 ◽  
pp. 1945-1949
Author(s):  
Ge Yu ◽  
Ya Liu ◽  
Dan Hong Hong ◽  
Dong Lin Li ◽  
Jian Xin Zang

Aluminum oxide-doped zinc oxide (AZO) films were deposited by radio frequency (RF) magnetron sputtering at various substrate temperatures and sputtering powers with pure argon flow. Their electrical and optical properties and microstructures were investigated by X-ray diffractometer (XRD), atomic force microscope (AFM), ultraviolet-visible spectrophotometer, four-probe tester. The investigation indicates that the electrical and optical properties and microstructures of the AZO films are remarkably influenced by substrate temperature and sputtering power. With the sputtering power increasing from 60W to 180W, the diffraction peaks rise significantly, the resistivity decreases quickly and the visible transmission is all quite high. When the substrate temperature increases from 25°C to 400°C, the diffraction peaks rise first and lower then both quickly, the resistivity decreases first sharply and then very slowly, and the visible transmission is also high. The films deposited at the substrate temperature 300°C with the sputtering power 180W have low resistivity 1.2×10–3 Ω•cm and high transmittance 92% at the same time.


2016 ◽  
Vol 211 ◽  
pp. 135-140 ◽  
Author(s):  
Guifeng Chen ◽  
Xiaoli Zhao ◽  
Hui Zhang ◽  
He Wang ◽  
Feifei Liu ◽  
...  

2011 ◽  
Vol 26 (12) ◽  
pp. 125016 ◽  
Author(s):  
Y H Xue ◽  
X D Zhang ◽  
Y Y Shen ◽  
D C Zhang ◽  
F Zhu ◽  
...  

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