Deep etched distributed Bragg reflector (DBR) InP/AlGaInP quantum dot lasers

2011 ◽  
Author(s):  
S. Shutts ◽  
G. Edwards ◽  
S. N. Elliott ◽  
P. M. Smowton ◽  
A. B. Krysa
Keyword(s):  
Quantum Dot ◽  
Bragg Reflector ◽  
Quantum Dot Lasers ◽  
Distributed Bragg Reflector

Light efficiency enhanced quantum dot color conversion layer based on a distributed Bragg reflector

2021 ◽  
Author(s):  
Yuanyuan Ye ◽  
Sheng Xu ◽  
Enguo Chen ◽  
Yun Ye ◽  
Xinpei Hu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Color Conversion ◽  
Light Efficiency

Quantum dot color filter on distributed Bragg reflector

2019 ◽  
Vol 34 (3) ◽  
pp. 229-235
Author(s):  
郭太良 GUO Tai-liang ◽  
缪煌辉 MIAO Huang-hui ◽  
林淑颜 LIN Shu-yan ◽  
郭 骞 GUO Qiang ◽  
叶 芸 YE Yun ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bragg Reflector ◽  
Color Filter ◽  
Distributed Bragg Reflector

scholarly journals Quantum-Dot Photonic-Crystal Surface-Emitting Lasers with Bottom Distributed Bragg Reflector

Photonics ◽  
2018 ◽  
Vol 5 (3) ◽  
pp. 27 ◽  
Author(s):  
Ming-Yang Hsu ◽  
Gray Lin
Keyword(s):  
Photonic Crystal ◽  
Quantum Dot ◽  
Crystal Surface ◽  
Bragg Reflector ◽  
Threshold Power ◽  
Optically Pumped ◽  
Distributed Bragg Reflector ◽  
Lasing Wavelength ◽  
Surface Emitting Laser ◽  
Emitting Lasers

Quantum-dot (QD) photonic-crystal (PC) surface-emitting laser (SEL) devices with bottom distributed Bragg reflector (DBR) were fabricated based on vertical-cavity SEL structure with top DBR completely removed. Two-dimensional (2D) PCs were deeply etched through QD multilayers to yield strong diffraction coupling. Room-temperature optically pumped lasing emissions at 1194 nm and 1296 nm were demonstrated for two lattice periods of 360 nm and 395 nm, respectively. Two lasing wavelengths separated over 100 nm; however, there were less than two times difference in threshold power densities while slope efficiencies were comparable. The unique spectral gain characteristics of QDs were considered in interpretation of gain-cavity detuning. Moreover, simulation revealed the sub-cavity should be designed so that its resonant wavelength is in phase with lasing wavelength.

scholarly journals Modeling and Simulation of a Resonant-Cavity-Enhanced InGaAs/GaAs Quantum Dot Photodetector

2015 ◽  
Vol 2015 ◽  
pp. 1-6 ◽  
Author(s):  
W. W. Wang ◽  
F. M. Guo ◽  
Y. Q. Li
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Reverse Bias ◽  
Detection Efficiency ◽  
Resonant Cavity ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector ◽  
Device Structure ◽  
High Quantum Efficiency ◽  
Gaas Quantum Dot

We simulated and analyzed a resonant-cavity-enhancedd InGaAs/GaAs quantum dot n-i-n photodiode using Crosslight Apsys package. The resonant cavity has a distributed Bragg reflector (DBR) at one side. Comparing with the conventional photodetectors, the resonant-cavity-enhanced photodiode (RCE-PD) showed higher detection efficiency, faster response speed, and better wavelength selectivity and spatial orientation selectivity. Our simulation results also showed that when an AlAs layer is inserted into the device structure as a blocking layer, ultralow dark current can be achieved, with dark current densities 0.0034 A/cm at 0 V and 0.026 A/cm at a reverse bias of 2 V. We discussed the mechanism producing the photocurrent at various reverse bias. A high quantum efficiency of 87.9% was achieved at resonant wavelength of 1030 nm with a FWHM of about 3 nm. We also simulated InAs QD RCE-PD to compare with InGaAs QD. At last, the photocapacitance characteristic of the model has been discussed under different frequencies.

OPTIMAL DESIGN OF SINGLE-PHOTON SOURCE EMISSION FROM A QUANTUM-DOT IN MICRO-PILLAR MICROCAVITY

2005 ◽  
Vol 03 (supp01) ◽  
pp. 229-238 ◽  
Author(s):  
Y.-L. D. HO ◽  
T. CAO ◽  
P. S. IVANOV ◽  
M. J. CRYAN ◽  
I. J. CRADDOCK ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Spontaneous Emission ◽  
Single Photon ◽  
Collection Efficiency ◽  
Large Fraction ◽  
Broad Band ◽  
Fdtd Method ◽  
Bragg Reflector ◽  
Dipole Source ◽  
Distributed Bragg Reflector

We have modelled wavelength scale micro-pillar microcavities of group III-V semiconductor materials using the 3-D finite difference time domain (FDTD) method. A broad band dipole source within the microcavity probes the microcavity mode structure and spectrum. We then investigated the modifications to spontaneous emission of photons form narrowband emitters (e.g. quantum dots) at the centre of the resonance. We find strongly enhanced emission due to small modal volumes and high quality factor (Q-factor). A large fraction of the quantum-dot spontaneous emission is coupled into the fundamental cavity mode. Increasing the number of mirror pairs in the bottom distributed Bragg reflector (DBR) obviously reduces the bottom light leakage, leading to light collection efficiency up to 90%. Moreover, we are now looking at more sophisticated structures with both lateral and perpendicular confinements based on annular and photonic crystal defect cavities in order to suppress the remaining sidewall scattering.

An InP-Based Quantum-Dot Tunable Three-Section Distributed Bragg Reflector Laser

2008 ◽  
Vol 20 (2) ◽  
pp. 147-149 ◽  
Author(s):  
D. J. Robbins ◽  
J. P. Duck ◽  
N. D. Whitbread ◽  
A. J. Ward ◽  
B. Rousseau ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Bragg Reflector ◽  
Distributed Bragg Reflector

scholarly journals Неклассические источники света на основе селективно позиционированных микролинзовых структур и (111) In(Ga)As квантовых точек

2019 ◽  
Vol 53 (10) ◽  
pp. 1338
Author(s):  
И.А. Деребезов ◽  
В.А. Гайслер ◽  
А.В. Гайслер ◽  
Д.В. Дмитриев ◽  
А.И. Торопов ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Single Photon ◽  
Photon Emission ◽  
Bragg Reflector ◽  
Entangled Photons ◽  
Single Photon Emission ◽  
Distributed Bragg Reflector ◽  
Natural Width ◽  
Single Quantum Dot

Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of these quantum dots.

Sign in / Sign up

Export Citation Format

Share Document