Electrical and optical properties of light-emitting field-effect transistors based on MEH-PPV polymer composite films with ZnO nanoparticles

2012 ◽  
Vol 54 (12) ◽  
pp. 2508-2513 ◽  
Author(s):  
A. N. Aleshin ◽  
I. P. Shcherbakov ◽  
F. S. Fedichkin ◽  
P. E. Gusakov
Keyword(s):  
Optical Properties ◽  
Polymer Composite ◽  
Zno Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Electrical And Optical Properties ◽  
Light Emitting

scholarly journals Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Electrical And Optical Properties ◽  
Doped Zno

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

Field Effect Transistors Based on Composite Films of Poly(4-vinylphenol) with ZnO Nanoparticles

2018 ◽  
Vol 47 (4) ◽  
pp. 2447-2453 ◽  
Author(s):  
Ouiza Boughias ◽  
Mohammed Said Belkaid ◽  
Rachid Zirmi ◽  
Thierry Trigaud ◽  
Bernard Ratier ◽  
...  
Keyword(s):  
Zno Nanoparticles ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films

scholarly journals Donor-Acceptor Interaction in Films of Tetracene–Tetracyanoquinodimethane Heterostructures and Composites

2018 ◽  
Vol 63 (1) ◽  
pp. 70
Author(s):  
M. P. Gorishnyi ◽  
A. B. Verbitsky
Keyword(s):  
Thin Films ◽  
Absorption Spectra ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Charge Transfer Complexes ◽  
Acceptor Interaction ◽  
Light Emitting ◽  
Donor Acceptor ◽  
First Time

The structures and the absorption and photovoltaic spectra of thin films of tetracene (TC) and tetracyanoquinodimethane (TCNQ), as well as the films of their heterostructures (TC/TCNQ) and composites (TC + TCNQ), have been studied. The heterostructures and composites are obtained by the thermal sputtering of the components – successively or simultaneously, respectively – in vacuum. The photovoltaic spectra were measured, by using the condenser method. It is found for the first time that the largest changes ΔD1 in the TC/TCNQ and TC + TCNQ absorption spectra with respect to the sum of the absorption spectra of the components are observed in the intervals of TCNQ dimeric bands at 2.214 eV (ΔD1 < 0) and in all TC bands (ΔD1 > 0). Those changes testify to the formation of charge transfer complexes between the TC (the electron donor) and TCNQ (the electron acceptor) molecules at the interfaces in the TC/TCNQ heterostructures and in the bulk of TC + TCNQ composites, which is also confirmed by the appearance of TC+- and TCNQ−-bands in the photovoltaic spectra of both the heterostructure and composite films. This result is important for a deeper understanding of the operating mechanisms in various potentially imaginable devices based on those heterostructures and composites (solar cells, field-effect transistors, and light-emitting diodes).

Light-Emitting Field-Effect Transistors Based on Composite Films of Polyfluorene and CsPbBr3 Nanocrystals

2019 ◽  
Vol 61 (2) ◽  
pp. 256-262 ◽  
Author(s):  
A. N. Aleshin ◽  
I. P. Shcherbakov ◽  
D. A. Kirilenko ◽  
L. B. Matyushkin ◽  
V. A. Moshnikov
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Composite Films ◽  
Light Emitting

scholarly journals Optical Properties of Oligo(9,9-diarylfluorene) Derivatives in Thin Films and Their Application for Organic Light-Emitting Field-Effect Transistors

2007 ◽  
Vol 111 (1) ◽  
pp. 108-115 ◽  
Author(s):  
Takahito Oyamada ◽  
Chih-Hao Chang ◽  
Teng-Chih Chao ◽  
Fu-Chuan Fang ◽  
Chung-Chih Wu ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Light Emitting ◽  
Organic Light

The influence of surface chemical dynamics on electrical and optical properties of ZnO nanowire field effect transistors

2009 ◽  
Vol 20 (50) ◽  
pp. 505202 ◽  
Author(s):  
Jung Inn Sohn ◽  
Woong-Ki Hong ◽  
Mi Jung Lee ◽  
Takhee Lee ◽  
Henning Sirringhaus ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Chemical Dynamics ◽  
Surface Chemical ◽  
Zno Nanowire ◽  
Electrical And Optical Properties

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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