The effect of uniaxial stress on the persistent photoconductivity in Te-doped AlxGa1−xAs

1987 ◽  
Vol 65 (5) ◽  
pp. 505-509
Author(s):  
Eric Johnstone ◽  
Masamichi Sakamoto ◽  
Stefan Zukotynski ◽  
Ralph A. Logan
Keyword(s):  
Decay Time ◽  
Uniaxial Stress ◽  
Donor Level ◽  
Deformation Potential ◽  
Persistent Photoconductivity ◽  
Photoconductivity Decay

Persistent photoconductivity in Te-doped AlxGa1−xAs is measured. It is found that the photoconductivity rise is a phonon-assisted process. The photoconductivity decay time increases with the application of stress. From the dependence of conductivity on stress, the donor-level deformation potential is determined to be approximately 2 meV∙kbar−1 (1 bar = 100 kPa). Some evidence is presented that suggests that more than one DX-type level is required to explain the features of the persistent photoconductivity.

Persistent Photoconductivity in p-Type 4H-SiC Bulk Crystals

2013 ◽  
Vol 740-742 ◽  
pp. 413-416 ◽  
Author(s):  
Takafumi Okuda ◽  
Hiroki Miyake ◽  
Tsunenobu Kimoto ◽  
Jun Suda
Keyword(s):  
Decay Time ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Persistent Photoconductivity ◽  
Bulk Crystals ◽  
Decay Times ◽  
Photoconductivity Decay ◽  
Increasing Temperature ◽  
P Type ◽  
Homoepitaxial Layers

We investigated the photoconductivity decay characteristics of p-type 4H-SiC bulk crystals grown by a modified Lely method by differential microwave photoconductance decay (μ-PCD) measurements using a 349-nm laser as an excitation source. We observed persistent photoconductivity (PPC) in the p-type SiC bulk crystals. The decay time at room temperature was 2600 μs. The decay time decreased with increasing temperature, resulting in 120 μs at 250oC, and the activation energy of the decay times was determined to be 140±10 meV. Long decay characteristics were also observed by below-band-gap excitation at 523 or 1047 nm. On the other hand, no PPC was observed in p-type homoepitaxial layers grown by hot-wall chemical vapor deposition.

Negative and persistent photoconductivity in p-type Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As heterostructures under uniaxial stress

2000 ◽  
Vol 18 (1-6) ◽  
pp. 57-62
Author(s):  
W. Kraak ◽  
N. Minina ◽  
A. M. Savin ◽  
T. Spangenberg ◽  
O. P. Hansen ◽  
...  
Keyword(s):  
Uniaxial Stress ◽  
Persistent Photoconductivity ◽  
P Type

ESR STUDY OF THE EFFECT OF UNIAXIAL STRESS ON THE BAND STRUCTURE OF CdS:I

1967 ◽  
Vol 45 (1) ◽  
pp. 127-135 ◽  
Author(s):  
B. J. Slagsvold ◽  
C. F. Schwerdtfeger
Keyword(s):  
Longitudinal Strain ◽  
Optical Band Gap ◽  
Energy Gap ◽  
Uniaxial Stress ◽  
Uniaxial Pressure ◽  
Transverse Strain ◽  
Deformation Potential ◽  
Average Change ◽  
Valence Bands ◽  
G Value

The shift with uniaxial pressure in the g value of the ESR signal obtained from conductive iodine-doped CdS has been measured at ≈ 1.7 °K. For pressures parallel to the c axis, an average change in the g tensor of ≈ 9.4 × 10−7 cm2/kg was found, while for perpendicular pressures [Formula: see text] shifted an average of ≈ 4.4 × 10−7 cm2/kg. These shifts have been ascribed to a change in the energy gap separating the conduction-band minimum from the valence bands. They, as well as the change in the optical band gap with hydrostatic pressure as measured by Langer (1960), could be fairly well described by the approximate values 6.3 eV/unit longitudinal strain and 1.8 eV/unit transverse strain of the deformation potential constants for the gap.

Photoconductivity Decay in Amorphous Semiconductors

1987 ◽  
Vol 95 ◽  
Author(s):  
William Pickin ◽  
Doroteo Mendoza ◽  
Juan Carlos Alonso
Keyword(s):  
Steady State ◽  
Decay Time ◽  
Minority Carrier ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Semiconductors ◽  
Decay Process ◽  
Intensity Dependence ◽  
Multiple Trapping ◽  
Photoconductivity Decay ◽  
Hydrogenated Amorphous

AbstractBased on modifications of the standard multiple trapping approach we present a theory of photoconductivity decay from the steady state in which explicit account is taken of the minority carrier behaviour. We use this to develop a physical understanding of the decay process. We obtain the intensity dependence of the decay time and compare it with experimental results for hydrogenated amorphous silicon.

Uniaxial Stress Effects On Valence Band Structures Of GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
A. A. Yamaguchi ◽  
Y. Mochizuki ◽  
C. Sasaoka ◽  
A. Kimura ◽  
M. Nido ◽  
...  
Keyword(s):  
Valence Band ◽  
Uniaxial Stress ◽  
Reflectance Spectroscopy ◽  
Experimental Results ◽  
Energy Separation ◽  
Strain Effect ◽  
Deformation Potential ◽  
Stress Effects ◽  
Polarization Characteristics ◽  
Valence Bands

AbstractValence band modification by uniaxial stress in GaN is investigated by reflectance spectroscopy. It is observed that the energy separation between the A and B valence bands increases with the applied uniaxial stress in the c-plane. Changes of the wavefunctions by the stress are also investigated by the polarization characteristics of the reflectance spectra. The experimental results are analyzed on the basis of k•p theory, and deformation potential D5 is experimentally determined as -3.3 eV. It is indicated that the uniaxial strain effect could be utilized for improving GaN-based laser performance.

Comparison of Carrier Lifetime Measurements and Mapping in 4H SiC Using Time Resolved Photoluminscence and μ-PCD

2014 ◽  
Vol 778-780 ◽  
pp. 301-304 ◽  
Author(s):  
Birgit Kallinger ◽  
Mathias Rommel ◽  
Louise Lilja ◽  
Jawad ul Hassan ◽  
Ian D. Booker ◽  
...  
Keyword(s):  
Decay Time ◽  
Carrier Lifetime ◽  
Measurement Theory ◽  
Measurement Techniques ◽  
Extended Defects ◽  
Lifetime Measurements ◽  
Time Resolved ◽  
Substrate Quality ◽  
Photoconductivity Decay ◽  
Time Resolved Photoluminescence

Carrier lifetime measurements and wafer mappings have been done on several different 4H SiC wafers to compare two different measurement techniques, time-resolved photoluminescence and microwave induced photoconductivity decay. The absolute values of the decay time differ with a factor of two, as expected from recombination and measurement theory. Variations within each wafer are comparable with the two techniques. Both techniques are shown to be sensitive for substrate quality and distribution of extended defects.

scholarly journals Энергетическая структура одиночного акцептора Mn в GaAs : Mn

2018 ◽  
Vol 60 (8) ◽  
pp. 1556
Author(s):  
Г.С. Димитриев ◽  
В.Ф. Сапега ◽  
Н.С. Аверкиев ◽  
J. Debus ◽  
E. Lahderanta ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Uniaxial Stress ◽  
Interaction Constant ◽  
External Stress ◽  
Energy Structure ◽  
Deformation Potential ◽  
Optical Transitions ◽  
Spin Flip ◽  
Proposed Model ◽  
Valence Band Hole

AbstractThe energy structure of the Mn acceptor, which is a complex of Mn^2+ ion plus valence band hole, is investigated in the external magnetic field and under presence of an uniaxial stress has been studied. The spin-flip Raman spectra are studied under resonant excitation of exciton bound to the Mn acceptor. The gfactors of the ground F = 1 and the first excited F = 2 states are determined and selection rules for the optical transitions between the acceptor states are described. The value of the random field (stress or electric field) acting on manganese acceptor and the deformation potential for the exchange interaction constant of the Mn^2+ + hole complex are obtained. A theoretical model is developed that takes into account the influence of random internal and uniaxial external stress and magnetic field. The proposed model describes well the lines of spin-flip Raman scattering of Mn acceptor.

Sign in / Sign up

Export Citation Format

Share Document