Article

1998 ◽  
Vol 76 (2) ◽  
pp. 105-110
Author(s):  
S S De ◽  
A K Ghosh ◽  
M Bera
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Carrier Density ◽  
Laser Intensity ◽  
Optical Excitation ◽  
Photoluminescence Spectra ◽  
Electron Hole ◽  
73.20 Dx ◽  
Excitation Conditions ◽  
Hole Recombination

Some physical characteristics of photoluminescence spectra in GaAs--(Ga,Al)As quantum-wells under steady optical excitation conditions are presented. They are based on the dependence of photoluminescence on laser intensity. The variations of carrier density with laser intensity and electron--hole recombination decay time are compared with earlier experimental results. PACS Nos. 73.20 Dx, 73.20 Mf

Origins of Parasitic Emissions from 353 nm AlGaN-based UV LEDs over SiC Substrates

2005 ◽  
Vol 892 ◽  
Author(s):  
Ji-Soo Park ◽  
Daryl W Fothergill ◽  
Patrick Wellenius ◽  
Seann M. Bishop ◽  
John F. Muth ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Optically Pumped ◽  
Electron Hole ◽  
Capping Layer ◽  
Uv Emission ◽  
Broad Emission ◽  
Shoulder Peak ◽  
P Type ◽  
Uv Leds ◽  
Hole Recombination

AbstractThe effects of p-GaN capping layers and p-type carrier-blocking layers on the occurrence of parasitic emissions from 353 nm AlGaN-based LEDs have been investigated. LEDs without a p-type Al0.25Ga0.75N carrier-blocking layer showed a shoulder peak at ∼370 nm due to electron overflow into the p-Al0.10Ga0.90N cladding layer and subsequent electron-hole recombination in the acceptor levels. Broad emission between 380 and 450 nm from LEDs having a p-GaN capping layer was caused by 420 nm luminescence from the p-GaN capping layer, which was optically pumped by 353 nm UV emission from the quantum wells. Broad, defect-related luminescence at ∼520 nm was emitted from the AlGaN layers within the quantum wells.

scholarly journals Спектр излучения и стабильность двух типов электронно-дырочной жидкости в мелких Si/Si-=SUB=-1-x-=/SUB=-Ge-=SUB=-x-=/SUB=-Si квантовых ямах

2020 ◽  
Vol 62 (4) ◽  
pp. 529
Author(s):  
А.А. Васильченко ◽  
В.С. Кривобок ◽  
С.Н. Николаев ◽  
В.С. Багаев ◽  
Е.Е. Онищенко ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Density Functional ◽  
Two Dimensional ◽  
Photoluminescence Spectra ◽  
Dimensional Electron ◽  
Electron Hole ◽  
Germanium Content ◽  
Well Design ◽  
Low Temperature Photoluminescence

Abstract Based on calculations within the density functional theory and an analysis of low-temperature photoluminescence spectra, the structure of electron–hole liquid in shallow Si/Si_1 – _ x Ge_ x Si (100) quantum wells 5 nm wide with germanium content x = 3–5.5% is studied. It is shown that the energy of quasi-two-dimensional electron–hole liquid localized in quantum wells for this composition range as a function of carrier concentration exhibits two local minima. The position of the deeper (major) minimum depends on the quantum well design and controls properties of quasi-two-dimensional electron–hole liquid at low temperatures. For the series of Si/Si_1 – _ x Ge_ x Si quantum wells, modification of properties of electron–hole liquid was experimentally shown, which can be interpreted as a change of the major minimum due to an increases in the germanium concentration in the Si_1 – _ x Ge_ x layer. The effect of the multicomponent composition (electrons, light and heavy holes) of the electron–hole liquid on low-temperature photoluminescence spectra of Si/Si_1 ‒ _ x Ge_ x Si quantum wells is discussed.

Reconstruction-dependent electron-hole recombination on GaAs(001) surfaces studied by using near-surface quantum wells

1996 ◽  
Vol 53 (12) ◽  
pp. 7880-7883 ◽  
Author(s):  
Hiroshi Yamaguchi ◽  
Kiyoshi Kanisawa ◽  
Yoshiji Horikoshi
Keyword(s):  
Quantum Wells ◽  
Electron Hole ◽  
Near Surface ◽  
Hole Recombination

scholarly journals Luminescence of ZnMnTe/ZnMgTe heterostructures with monolayer manganese inclusions in ZnTe quantum wells and its behavior in a magnetic field

2018 ◽  
Vol 52 (4) ◽  
pp. 481
Author(s):  
I.V. Shtrom ◽  
V.F. Agekyan ◽  
A.Yu. Serov ◽  
N.G. Filosofov ◽  
R.R. Akhmadullin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Heavy Hole ◽  
Zeeman Splitting ◽  
Unusual Behavior ◽  
Electron Hole ◽  
Quantum Well Structures ◽  
Magnetic Components ◽  
Magnetic Ions ◽  
Far From Equilibrium ◽  
Excitation Conditions

AbstractLight emission from ZnMnTe/ZnMgTe structures with the quantum wells ZnTe containing monolayer manganese inclusions and quantum wells Zn_0.45Mn_0.15Te were investigated under the different excitation conditions. The heavy-hole exciton σ^+ and σ^– magnetic components show the unusual behavior concerning their energy shifts and intensities. It is possible to explain the Zeeman splitting of the heavy exciton emission band if the following factors are taken into account. Firstly, ZnMnTe/ZnMgTe quantum well structures are of the type II due to the strains as concerns to the electron and heavy hole. Secondly, the electron and hole magnetic sublevels population is far from equilibrium due to the fast energy transfer from the electron- hole system to the 3 d -shells of magnetic ions.

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