Improved Epitaxy and Surface Morphology in YBa2Cu3Oy Thin Films Grown on Double Buffered Si Wafers
2003 ◽
Vol 17
(18n20)
◽
pp. 3695-3697
◽
Keyword(s):
X Ray
◽
Highly epitaxial thin films of YBCO have been obtained on silicon wafers using a Eu 2 CuO 4/ YSZ (yttrium-stabilized ZrO 2) double buffer. Our results showed that application of such a double buffer can significantly enhance the epitaxy of grown YBCO. It also leads to an excellent surface morphology. The average surface roughness was found less than 5 nm in a large range. The results of X-ray small angle reflection and positron spectroscpy demonstrate a very clear and flat interface between YBCO and buffer layers. The Eu 2 CuO 4/ YSZ double buffer could be promising for coating high-TC superconducting films on various reactive substrates.