THE OPTICAL STARK EFFECT OF THE EXCITON DUE TO DYNAMICAL COUPLING BETWEEN QUANTIZED STATES OF THE ELECTRON AND HOLE IN QUANTUM WELLS

1993 ◽  
Vol 07 (19) ◽  
pp. 3405-3413 ◽  
Author(s):  
NGUYEN HONG QUANG
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Stark Effect ◽  
Photon Absorption ◽  
Pump Field ◽  
Absorption Probability ◽  
Dynamical Coupling ◽  
Optical Stark Effect

Optical Stark effect of the exciton in quantum wells is treated by taking into account not only dynamical coupling by pump field between quantized states of the electron in the conduction band but also the coupling between quantized states of the hole in the valence band. The changes in the calculated one-photon absorption probability by exciton depend essentially on pump field detuning.

Conduction-band and valence-band structures in strainedIn1−xGaxAs/InP quantum wells on (001) InP substrates

1993 ◽  
Vol 48 (11) ◽  
pp. 8102-8118 ◽  
Author(s):  
Mitsuru Sugawara ◽  
Niroh Okazaki ◽  
Takuya Fujii ◽  
Susumu Yamazaki
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Structures ◽  
Inp Substrates

Spectral dependence of the optical Stark effect in ZnSe-based quantum wells

2004 ◽  
Vol 69 (8) ◽  
Author(s):  
G. Papageorgiou ◽  
R. Chari ◽  
G. Brown ◽  
A. K. Kar ◽  
C. Bradford ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Spectral Dependence ◽  
Stark Effect ◽  
Optical Stark Effect

The excitonic optical stark effect in semiconductor quantum wells probed with femtosecond optical pulses

1989 ◽  
Vol 44 (4-6) ◽  
pp. 233-246 ◽  
Author(s):  
D.S. Chemla ◽  
W.H. Knox ◽  
D.A.B. Miller ◽  
S. Schmitt-Rink ◽  
J.B. Stark ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Optical Pulses ◽  
Semiconductor Quantum Wells ◽  
Optical Stark Effect

scholarly journals Tunable room-temperature spin-selective optical Stark effect in solution-processed layered halide perovskites

2016 ◽  
Vol 2 (6) ◽  
pp. e1600477 ◽  
Author(s):  
David Giovanni ◽  
Wee Kiang Chong ◽  
Herlina Arianita Dewi ◽  
Krishnamoorthy Thirumal ◽  
Ishita Neogi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Stark Effect ◽  
Cryogenic Cooling ◽  
Oscillator Strengths ◽  
Multiple Quantum ◽  
Solution Processed ◽  
Lattice Matching ◽  
Light Matter Interaction ◽  
Optical Stark Effect

Ultrafast spin manipulation for opto–spin logic applications requires material systems that have strong spin-selective light-matter interaction. Conventional inorganic semiconductor nanostructures [for example, epitaxial II to VI quantum dots and III to V multiple quantum wells (MQWs)] are considered forerunners but encounter challenges such as lattice matching and cryogenic cooling requirements. Two-dimensional halide perovskite semiconductors, combining intrinsic tunable MQW structures and large oscillator strengths with facile solution processability, can offer breakthroughs in this area. We demonstrate novel room-temperature, strong ultrafast spin-selective optical Stark effect in solution-processed (C6H4FC2H4NH3)2PbI4 perovskite thin films. Exciton spin states are selectively tuned by ~6.3 meV using circularly polarized optical pulses without any external photonic cavity (that is, corresponding to a Rabi energy of ~55 meV and equivalent to applying a 70 T magnetic field), which is much larger than any conventional system. The facile halide and organic replacement in these perovskites affords control of the dielectric confinement and thus presents a straightforward strategy for tuning light-matter coupling strength.

Resonant Zener tunneling of electrons between valence‐band and conduction‐band quantum wells

1987 ◽  
Vol 51 (8) ◽  
pp. 575-577 ◽  
Author(s):  
Jeremy Allam ◽  
Fabio Beltram ◽  
Federico Capasso ◽  
Alfred Y. Cho
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Zener Tunneling

Electron and Hole Confinement in GaInN/GaN and AlGaN/GaN Quantum Wells

2001 ◽  
Vol 693 ◽  
Author(s):  
A. Hangleiter ◽  
S. Lahmann ◽  
C. Netzel ◽  
U. Rossow ◽  
P. R. C. Kent ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Conduction Band ◽  
Band Offset ◽  
Valence Band Edge ◽  
Valence Band Offset ◽  
Time Resolved ◽  
Conduction Band Offset ◽  
Hole Confinement ◽  
Weak Electron

AbstractWe show that the strong bowing of the bandgap of GaInN, which is primarily due to bowing of the valence band edge, translates into a strongly composition dependent ratio of the conduction band offset to the valence band offset with respect to GaN. For common In mole fractions of 0-20 % this leads to a reversal of the band offset ratio and to very weak electron con nement. This theoretical picture is veri ed by comparing results of time-resolved spectroscopy on asymmetric AlGaN/GaInN/GaN and AlGaN/GaN/AlGaN quantum wells. Since electron con nement is much stronger for GaN/AlGaN wells than for GaInN/GaN wells, the effect of asymmetry is very weak for the former and fairly strong for the latter.

Polarization Dependence in the Intraband Optical Stark Effect of Quantum Wells

1992 ◽  
Vol 173 (1) ◽  
pp. 83-89 ◽  
Author(s):  
D. Fröhlich ◽  
S. Spitzer ◽  
B. Uebbing ◽  
R. Zimmermann
Keyword(s):  
Quantum Wells ◽  
Stark Effect ◽  
Polarization Dependence ◽  
Optical Stark Effect
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