Bi-directional photonic switch and optical data storage in a hybrid optomechanical system

Author(s):  
Surabhi Yadav ◽  
Aranya B Bhattacherjee

We propose to achieve quantum optical nonreciprocity in a hybrid qubit-optomechanical solid-state system. A two-level system (qubit) is coupled to a mechanically compliant mirror (via the linear Jaynes–Cummings interaction) placed in the middle of a solid-state optical cavity. We show for the first time that the generated optical bistability exhibits a bi-directional photonic switch, making the device a suitable candidate for a duplex communication system. On further exploring the fluctuation dynamics of the system, we found that the proposed device breaks the symmetry between forward and backward propagating optical modes (optical nonreciprocity), which can be controlled by tuning the various system parameters, including the qubit, which emerges as a new handle. The device thus behaves like an optical isolator and hence can store optical data in the acoustic mode, which can be retrieved later.

1994 ◽  
Vol 339 ◽  
Author(s):  
M. Asif Khan ◽  
J. N. Kuznia ◽  
S. Krishnankutty ◽  
R. A. Skogman ◽  
D. T. Olson ◽  
...  

ABSTRACTAvailability of optoelectronic components operating in the U V-Visible part of the spectrum opens several exciting and important system applications. Solid state ultraviolet and blue-green lasers can increase the optical data storage density of CDROM/WORM and magneto-optical disks by a factor of four. They are also ideally suited for environmental pollutant identification and monitoring. On the other hand, solid state ultraviolet detectors that do not respond to visible or IR radiation are highly desirable for various commercial systems. These include medical imaging, industrial boiler systems, fire/flame safeguard systems around oil and gas installations and several military applications. A key requirement for these ultraviolet laser and sensor devices is the availability of a semiconductor material system with high quality controlled doping and fabrication technology.AlxGa1−xN and InxGa1−xN for which the direct bandgap can be tailored from the visible to the deep UV is such a material system. Ours and several other research groups (nationally and internationally) have been developing AlxGa1−xN materials and processing technologies over the past several years. Recently, by employing innovative approaches, significant advances have been made in heteroepitaxy of AlxGa1−xN on sapphire substrates. Also, controlled n and p-type doping has been achieved. Several high performance devices that form the basis of exciting future research have been demonstrated. These include high responsivity visible blind ultraviolet sensors, basic transistor structures and high power blue light emitting diodes. These pave the way for future research leading to exciting products such as blue-green lasers and UV-imaging arrays. The demonstrated transistor structures are foundation for building AlxGa1−xN -GaN based high power, high frequency and high temperature electronic components. In this paper, we will summarize some of our recent work and reflect on the potential and the issues in AlxGa1−xN-InxGa1−xN based device development.


2021 ◽  
Vol 11 (1) ◽  
Author(s):  
C. Mihai ◽  
F. Sava ◽  
I. D. Simandan ◽  
A. C. Galca ◽  
I. Burducea ◽  
...  

AbstractThe lack of order in amorphous chalcogenides offers them novel properties but also adds increased challenges in the discovery and design of advanced functional materials. The amorphous compositions in the Si–Ge–Te system are of interest for many applications such as optical data storage, optical sensors and Ovonic threshold switches. But an extended exploration of this system is still missing. In this study, magnetron co-sputtering is used for the combinatorial synthesis of thin film libraries, outside the glass formation domain. Compositional, structural and optical properties are investigated and discussed in the framework of topological constraint theory. The materials in the library are classified as stressed-rigid amorphous networks. The bandgap is heavily influenced by the Te content while the near-IR refractive index dependence on Ge concentration shows a minimum, which could be exploited in applications. A transition from a disordered to a more ordered amorphous network at 60 at% Te, is observed. The thermal stability study shows that the formed crystalline phases are dictated by the concentration of Ge and Te. New amorphous compositions in the Si–Ge–Te system were found and their properties explored, thus enabling an informed and rapid material selection and design for applications.


Coatings ◽  
2021 ◽  
Vol 11 (7) ◽  
pp. 818
Author(s):  
Xuehua Zhang ◽  
Qian Wang ◽  
Shun Liu ◽  
Wei Zhang ◽  
Fangren Hu ◽  
...  

GeO2/organically modified silane (ormosils) organic-inorganic composite films containing azobenzene were prepared by combining sol-gel technology and spin coating method. Optical waveguide properties including the refractive index and thickness of the composite films were characterized by using a prism coupling instrument. Surface morphology and photochemical properties of the composite films were investigated by atomic force microscope and Fourier transform infrared spectrometer. Results indicate that the composite films have smooth and neat surface, and excellent optical waveguide performance. Photo-isomerization properties of the composite films were studied by using a UV–Vis spectrophotometer. Optical switching performance of the composite films was also studied under the alternating exposure of 365 nm ultraviolet light and 410 nm visible light. Finally, strip waveguides and microlens arrays were built in the composite films through a UV soft imprint technique. Based on the above results, we believe that the prepared composite films are promising candidates for micro-nano optics and photonic applications, which would allow directly integrating the optical data storage and optical switching devices onto a single chip.


2006 ◽  
Vol 18 (S1) ◽  
pp. 38-44
Author(s):  
Bernhard Cord ◽  
Michael Mücke ◽  
Eggo Sichmann

2002 ◽  
Author(s):  
Edwin P. Walker ◽  
Jacques Duparre ◽  
Haichuan Zhang ◽  
Wenyi Feng ◽  
Yi Zhang ◽  
...  

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