VERTICAL SILICON NANOWIRES WITH ATOMIC LAYER DEPOSITION WITH HfO2 MEMBRANE FOR pH SENSING APPLICATION

Vertical silicon nanowire (SiNW) platforms are candidates for use in ultrasensitive biosensors, with surface-to-volume ratio higher than one-dimensional SiNW . In this paper, a vertical SiNW electrolyte–insulator–semiconductor (EIS) structure with an ALD-HfO2 sensing membrane is proposed for use in a hydrogen ion sensor. Hafnium dioxide is used as the sensing membrane, which was deposited on the surface of the vertical SiNW structure by atomic layer deposition. The sensing properties were examined using a HP4284A high-precision LCR analyzer. A linear relationship was found between the flatband voltage shift and the hydrogen ion concentration. Comparing with different diameters of SiNW , the sensitivity with diameter of 200 nm was slightly higher than 100 nm. A post-deposition rapid thermal annealing (RTA) was utilized to optimize the sensing properties, and the sensitivity was increased to 51.07 mV/pH.

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Effects of CF4Plasma Treatment on pH and pNa Sensing Properties of Light-Addressable Potentiometric Sensor with a 2-nm-Thick Sensitive HfO2Layer Grown by Atomic Layer Deposition

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dl06 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DL06 ◽

Cited By ~ 4

Author(s):

Chi-Hang Chin ◽

Tseng-Fu Lu ◽

Jer-Chyi Wang ◽

Jung-Hsiang Yang ◽

Cheng-En Lue ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Atomic Layer ◽

Potentiometric Sensor ◽

Sensing Properties ◽

Layer Deposition ◽

Light Addressable Potentiometric Sensor

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Electrical properties of germanium/metal-oxide gate stacks with atomic layer deposition grown hafnium-dioxide and plasma-synthesized interface layers

Applied Physics Letters ◽

10.1063/1.2472197 ◽

2007 ◽

Vol 90 (11) ◽

pp. 112912 ◽

Cited By ~ 45

Author(s):

Takuya Sugawara ◽

Yasuhiro Oshima ◽

Raghavasimhan Sreenivasan ◽

Paul C. McIntyre

Keyword(s):

Electrical Properties ◽

Atomic Layer Deposition ◽

Metal Oxide ◽

Atomic Layer ◽

Hafnium Dioxide ◽

Gate Stacks ◽

Layer Deposition ◽

Interface Layers

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Comparison of Hafnium Dioxide and Zirconium Dioxide Grown by Plasma-Enhanced Atomic Layer Deposition for the Application of Electronic Materials

Crystals ◽

10.3390/cryst10020136 ◽

2020 ◽

Vol 10 (2) ◽

pp. 136 ◽

Cited By ~ 4

Author(s):

Zhigang Xiao ◽

Kim Kisslinger ◽

Sam Chance ◽

Samuel Banks

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Zirconium Dioxide ◽

Atomic Layer ◽

Gate Oxide ◽

Hafnium Dioxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

X Ray ◽

Layer Deposition

We report the growth of nanoscale hafnium dioxide (HfO2) and zirconium dioxide (ZrO2) thin films using remote plasma-enhanced atomic layer deposition (PE-ALD), and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using the HfO2 and ZrO2 thin films as the gate oxide. Tetrakis (dimethylamino) hafnium (Hf[N(CH3)2]4) and tetrakis (dimethylamino) zirconium (IV) (Zr[N(CH3)2]4) were used as the precursors, while O2 gas was used as the reactive gas. The PE-ALD-grown HfO2 and ZrO2 thin films were analyzed using X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and high-resolution transmission electron microscopy (HRTEM). The XPS measurements show that the ZrO2 film has the atomic concentrations of 34% Zr, 2% C, and 64% O while the HfO2 film has the atomic concentrations of 29% Hf, 11% C, and 60% O. The HRTEM and XRD measurements show both HfO2 and ZrO2 films have polycrystalline structures. n-channel and p-channel metal-oxide semiconductor field-effect transistors (nFETs and pFETs), CMOS inverters, and CMOS ring oscillators were fabricated to test the quality of the HfO2 and ZrO2 thin films as the gate oxide. Current-voltage (IV) curves, transfer characteristics, and oscillation waveforms were measured from the fabricated transistors, inverters, and oscillators, respectively. The experimental results measured from the HfO2 and ZrO2 thin films were compared.

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