Особенности роста слоев в напряженных сверхрешетках InAs/GaSb

The paper presents the results of a study of factors affecting the thickness of transition (interface) layers in stressed InAs/GaSb superlattices during growth by MOCVD method. It is shown that the thicknesses of the interface layers between InAs and GaSb are practically independent of the growth temperature. The thickness of the interface layers is influenced by the direction of switching the layer growth. The smallest thickness of 1.2-1.4 nm of the interface layer InAs/GaSb was obtained for the direction of growth switching from GaSb to InAs.

High tunability and sensitivity of 1D topological photonic crystal heterostructure

A modality to high tunability and sensing performance of one-dimensional (1D) topological photonic crystal (PC) heterostructure is realized based on a new mechanism through 1D topological PC. With inserting a defect aqueous layer as a sandwich between two 1D PCs, the transmittance gradually decreases with the increasing thickness of the defect layer. When the two layers of the topological heterostructure interface are replaced by the defect layer, the tunability, all sensing capabilities have been improved and the principle of topology is preserved. A topologically protected edge state is formed at the heterostructure interface with a highly localized electric field. For glucose sensing, high sensitivity S = 603.753 nm/RIU is obtained at the low detection limit of about DL = 1.22×10^(-4) RIU with high-quality factor Q = 2.33×10^4 and a high figure of merit FOM = 8147.814 RIU^(-1). Besides, the transmittance can be maintained more than 99% at low and/or high glucose concentrations, due to the coupling topological edge mode between defect mode and topological edge state. An excellent platform is examined for the design of a topological photonic sensor which is a flexible platform that can be used for any type of sensor solely by replacing the interface layers with the sensor materials. Thus, our results will promote the development of 1D topological photonic devices.

Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide

Non-volatile memories based on ferroelectric hafnium oxide, especially the ferroelectric field-effect transistor (FeFET), have outstanding properties, e.g. for the application in neuromorphic circuits. However, material development has focused so far mainly on metal–ferroelectric–metal (MFM) capacitors, while FeFETs are based on metal–ferroelectric–insulator–semiconductor (MFIS) capacitors. Here, the influence of the interface properties, annealing temperature and Si-doping content are investigated. Antiferroelectric-like behavior is strongly suppressed with a thicker interface layer and high annealing temperature. In addition, high-k interface dielectrics allow for thicker interface layers without retention penalty. Moreover, the process window for ferroelectric behavior is much larger in MFIS capacitors compared to MFM-based films. This does not only highlight the substrate dependence of ferroelectric hafnium oxide films, but also gives evidence that the phase diagram of ferroelectric hafnium oxide is defined by the mechanical stress. Graphic Abstract

A successive multi-phase transitions in polycrystalline BaFe2As2: Emergence of C4 phase

We report magnetization and resistivity studies on polycrystalline BaFe2As2 prepared by solid-state reaction, in the temperature range of 5–350 K, upto the field of 9 T. Low-field susceptibility exhibits multi-phase transitions with two new magnetic phase transitions beside the well-known transition at [Formula: see text] K from paramagnetic/antiferromagnetic-tetragonal/orthorhombic transitions. The phase at [Formula: see text] K is attributed to the phase transition from antiferromagnetic-orthorhombic (C2-phase) to antiferromagnetic-tetragonal phase (C4-phase), while the phase transition at higher temperatures remains unsolved. Making an analogy to the antiferromagnetic nanosized particles, we suggest that BaFe2As2 consists of smaller but similar nanosized clusters. We have analyzed the magnetization data using the modified Langevin function on the basis of thermally activated induced uncompensated spins (thermoinduced moments). The nanosized clustering in this compound is evidenced by the exchange bias and coercivity stemming from the exchange coupling interactions between weak ferromagnetic bulk magnetization in clusters and spin-glass-like phase interface layers surrounding the clusters. We also observe that annealing enhances the superconductivity, similar to the effect of pressure on the superconductivity. We find that an exponential term well describes the resistivity of this compound due to magnon-assisted interband electron–phonon scattering between the bands with [Formula: see text] and [Formula: see text] orbitals forming two-hole pockets around the zone center and one electron pocket around the zone corner. We have also obtained the Kadowaki–Woods ratio ([Formula: see text] cm (K mol/mJ)[Formula: see text] and the Sommerfeld–Wilson ratio ([Formula: see text]) for BaFe2As2, both ratios are much larger than those ([Formula: see text]/[Formula: see text] cm (K mol/mJ)2, [Formula: see text]) for Kondo lattice systems, indicating the existence of a weak ferromagnetic correlation between Fe moments. It appears that magnon-mediated pairing is responsible for superconductivity. Finally, we observe zero resistance at [Formula: see text] K in amorphous BaFe2As2, which gives a new insight into the superconductivity under very high pressure.

Preventing bulky cation diffusion in lead halide perovskite solar cells

The impact on device stability of the bulky cation-modified interfaces in halide perovskite solar cells is not well-understood. We demonstrate the thermal instability of the bulky cation interface layers used in some of the highest performing solar cells to date. X-ray photoelectron spectroscopy and synchrotron-based grazing incidence X-ray scattering measurements reveal significant changes under thermal stress in the chemical composition and structure at the surface of these films. The changes impact charge carrier dynamics and device operation, as shown in transient photoluminescence, excitation correlation spectroscopy, and solar cells. The type of cation used for passivation affects the extent of these changes, where long carbon chains provide more stable interfaces and thus longer durability (more than 1000 hrs at 55ºC). Such findings highlight that annealing the treated interfaces before characterization is critical to enable reliable reporting of performances and to drive the selection between different cations.

Properties of Barium Cerate-Zirconate Thin Films

In this work, we review several experimental results showing the electrical properties of barium cerate-zirconate thin films and discuss them in view of the possible influence of various factors on their properties. Most of the presented Ba(Ce, Zr, Y)O3 thin films were formed by the pulsed laser deposition (PLD) technique, however thin films prepared using other methods, like RF magnetron sputtering, electron-beam deposition, powder aerosol deposition (PAD), atomic layer deposition (ALD) and spray deposition are also reported. The electrical properties of the thin films strongly depend on the film microstructure. The influence of the interface layers, space-charge layers, and strain-modified layers on the total conductivity is also essential but in many cases is weaker.