scholarly journals TRANSPORT PROPERTIES OF 2D ELECTRON GAS IN AN n-InGaAs/GaAs DQW IN A VICINITY OF LOW MAGNETIC-FIELD-INDUCED HALL INSULATOR–QUANTUM HALL LIQUID TRANSITION

2007 ◽  
Vol 06 (03n04) ◽  
pp. 173-177
Author(s):  
YU. G. ARAPOV ◽  
S. V. GUDINA ◽  
G. I. HARUS ◽  
V. N. NEVEROV ◽  
N. G. SHELUSHININA ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Electron Gas ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Double Quantum ◽  
Ballistic Regime ◽  
2D Electron Gas ◽  
Double Quantum Well ◽  
Liquid Transition ◽  
Low Magnetic Field

The resistivity (ρ) of low mobility dilute 2D electron gas in an n- InGaAs / GaAs double quantum well (DQW) exhibits the monotonic "insulating-like" temperature dependence (dρ/dT < 0) at T = 1.8–70 K in zero magnetic field. This temperature interval corresponds to a ballistic regime (kBTτ/ħ > 0.1–3.5) for our samples, and the electron density is on an "insulating" side of the so-called B = 0 2D metal–insulator transition. We show that the observed features of localization and Landau quantization in a vicinity of the low magnetic-field-induced insulator–quantum Hall liquid transition is due to the σxy(T) anomalous T-dependence.

Ring interferometer on the basis of 2D electron gas in a double quantum well

JETP Letters ◽  
2003 ◽  
Vol 78 (9) ◽  
pp. 560-563
Author(s):  
A. A. Bykov ◽  
D. V. Nomokonov ◽  
A. K. Bakarov ◽  
A. I. Toropov ◽  
O. Estibals ◽  
...  
Keyword(s):  
Quantum Well ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas ◽  
Ring Interferometer ◽  
Double Quantum Well

Magnetic-field-driven destruction of quantum Hall states in a double quantum well

1990 ◽  
Vol 64 (15) ◽  
pp. 1793-1796 ◽  
Author(s):  
G. S. Boebinger ◽  
H. W. Jiang ◽  
L. N. Pfeiffer ◽  
K. W. West
Keyword(s):  
Magnetic Field ◽  
Quantum Well ◽  
Quantum Hall ◽  
Double Quantum ◽  
Quantum Hall States ◽  
Double Quantum Well ◽  
Hall States

scholarly journals The temperature dependence of the conductivity peak values in the single and the double quantum well nanostructures n-InGaAs/GaAs after IR-illumination

2017 ◽  
Vol 51 (2) ◽  
pp. 281
Author(s):  
Yu.G. Arapov ◽  
S.V. Gudina ◽  
A.S. Klepikova ◽  
V.N. Neverov ◽  
G.I. Harus ◽  
...  
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Double Quantum ◽  
Integer Quantum Hall Effect ◽  
Double Quantum Well ◽  
Scaling Hypothesis ◽  
Integer Quantum ◽  
Two Parameter

The dependences of the longitudinal and Hall resistances on a magnetic field in n-InGaAs/GaAs heterostructures with a single and double quantum wells after infrared illumination are measured in the range of magnetic fields B=0-16 T and temperatures T=0.05-4.2 K. Analysis of the experimental results was carried out on a base of two-parameter scaling hypothesis for the integer quantum Hall effect. The value of the second (irrelevant) critical exponent of the theory of two-parameter scaling was estimated. DOI: 10.21883/FTP.2017.02.44119.8302

scholarly journals An all-epitaxial nitride heterostructure with concurrent quantum Hall effect and superconductivity

2021 ◽  
Vol 7 (8) ◽  
pp. eabf1388
Author(s):  
Phillip Dang ◽  
Guru Khalsa ◽  
Celesta S. Chang ◽  
D. Scott Katzer ◽  
Neeraj Nepal ◽  
...  
Keyword(s):  
Hall Effect ◽  
Quantum Hall Effect ◽  
Electron Gas ◽  
Quantum Hall ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
2D Electron Gas ◽  
Integer Quantum Hall Effect ◽  
Topological Quantum ◽  
Integer Quantum

Creating seamless heterostructures that exhibit the quantum Hall effect and superconductivity is highly desirable for future electronics based on topological quantum computing. However, the two topologically robust electronic phases are typically incompatible owing to conflicting magnetic field requirements. Combined advances in the epitaxial growth of a nitride superconductor with a high critical temperature and a subsequent nitride semiconductor heterostructure of metal polarity enable the observation of clean integer quantum Hall effect in the polarization-induced two-dimensional (2D) electron gas of the high-electron mobility transistor. Through individual magnetotransport measurements of the spatially separated GaN 2D electron gas and superconducting NbN layers, we find a small window of magnetic fields and temperatures in which the epitaxial layers retain their respective quantum Hall and superconducting properties. Its analysis indicates that in epitaxial nitride superconductor/semiconductor heterostructures, this window can be significantly expanded, creating an industrially viable platform for robust quantum devices that exploit topologically protected transport.

Interwell radiative recombination of a 2D electron gas in electrically biased double quantum wells

1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas

scholarly journals Fractional Quantum Hall States at Zero Magnetic Field

2011 ◽  
Vol 106 (23) ◽  
Author(s):  
Titus Neupert ◽  
Luiz Santos ◽  
Claudio Chamon ◽  
Christopher Mudry
Keyword(s):  
Magnetic Field ◽  
Quantum Hall ◽  
Zero Magnetic Field ◽  
Fractional Quantum ◽  
Fractional Quantum Hall ◽  
Quantum Hall States ◽  
Hall States
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