SHAPE EVOLUTION IN ONE-DIMENSIONAL ZnO NANOSTRUCTURES GROWN FROM ZnO NANOPOWDER SOURCE: VAPOR–LIQUID–SOLID VERSUS VAPOR–SOLID GROWTH MECHANISMS

2011 ◽  
Vol 10 (01n02) ◽  
pp. 75-79 ◽  
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI

Here we report on the growth and evolution of ZnO nanowires grown from ZnO nanopowder as a source material using a horizontal muffle furnace. The shape evolution has been studied with variation in growth temperature and zinc vapor pressure. The structural analysis on these nanostructures shows c-axis oriented aligned growth. Scanning electron microscopy imaging of these nanostructures revealed the shape evolution from nanowires to nanoribbons and then to nanorods as the growth temperature increases from 650°C to 870°C. At 650°C, only vertical nanowires have been observed and with increase in growth temperature nanowires transform to nanoribbons and then to nanorods at 870°C. And we also observed simultaneous growth of nanorods and nanoribbons under a specific growth condition. We believe that these nanowires and nanorods were formed by vapor–liquid–solid growth mechanism (catalyst-mediated growth), whereas nanoribbons were grown by vapor–solid growth mechanism (without the aid of a metal catalyst). We observed simultaneous occurrence of vapor–liquid–solid and vapor–solid growth mechanisms at a particular growth temperature. These ZnO nanowires exhibit bound exciton related UV emission at ~379 nm, and defect-emission band in the visible region. Possible growth mechanism, shape evolution, and simultaneous growth of two types of one-dimensional ZnO nanostructures under the same growth condition are discussed.

2011 ◽  
Vol 10 (04n05) ◽  
pp. 833-837
Author(s):  
SOUMEN DHARA ◽  
P. K. GIRI

We study the effect of ZnO source and growth temperatures on morphology of the ZnO nanostructures. Nanostructures grown from ZnO nanopowder show the shape evolution from nanowires to nanoribbons and then to nanorods with variation in growth temperature and zinc vapor pressure. At 750°C, only vertically aligned nanowires have been observed and with increase in growth temperature nanowires transforms to nanoribbons and then finally to nanorods at 870°C. On the other hand, in case of ZnO bulk powder as a source material, only nanowires are produced at all temperatures. Raman scattering studies on the nanostructures show distinct [Formula: see text] mode at ~ 437 cm-1, confirming the hexagonal wurtzite phase of the as grown nanostructures. Room temperature photoluminescence spectra exhibit bound exciton related strong UV emission at ~ 379 nm indicating high quality of the as-grown nanostructures. Possible mechanism of growth and shape evolution in ZnO nanostructures are explored through systematic studies of the effect of growth temperatures and zinc vapor pressure.


1998 ◽  
Vol 536 ◽  
Author(s):  
N. Ozaki ◽  
Y. Ohno ◽  
S. Takeda ◽  
M. Hirata

AbstractWe have grown Si nanowhiskers on a Si{1111} surface via the vapor-liquid-solid (VLS) mechanism. The minimum diameter of the crystalline is 3nm and is close to the critical value for the effect of quantum confinement. We have found that many whiskers grow epitaxially or non-epitaxially on the substrate along the 〈112〉 direction as well as the 〈111〉 direction.In our growth procedure, we first deposited gold on a H-terminated Si{111} surface and prepared the molten catalysts of Au and Si at 500°C. Under the flow of high pressure silane gas, we have succeeded in producing the nanowhiskers without any extended defects. We present the details of the growth condition and discuss the growth mechanism of the nanowhiskers extending along the 〈112〉 direction.


2022 ◽  
Author(s):  
Nikolaos Kelaidis ◽  
Matthew Zervos ◽  
Nektarios Lathiotakis ◽  
Alexander Chroneos ◽  
Eugenia Tanasă ◽  
...  

PbO nanowires have been obtained via a self-catalyzed, vapor-liquid-solid mechanism and the reaction of Pb with O2 between 200°C and 300°C at 10 Pa. These had the form of tapes...


2006 ◽  
Vol 22 (06) ◽  
pp. 768-770
Author(s):  
LI Wen-Jun ◽  
◽  
◽  
XU Hai-Tao ◽  
GUO Yan-Chuan ◽  
...  

2011 ◽  
Vol 197-198 ◽  
pp. 617-622
Author(s):  
Xue Wen Chong ◽  
Chuan Zhen Huang ◽  
Liang Xu ◽  
Bin Zou ◽  
Han Lian Liu ◽  
...  

TiCxN1-x whiskers were prepared using TiO2 and carbon mixed powder as the starting powder at the atmosphere of nitrogen by the carbothermal reduction process. NaCl and NiCl2 were added into the starting powder as the cosolvent and growth adds of impurities, respectively. An effect of the content of TiO2 and carbon in the starting powder on the TiCxN1-x whiskers was investigated. It is found from SEM and XRD observations that three types of TiCx N1-x whiskers are obtained when the different mol ratios of C and Ti are applied. The growth of whiskers is not only urged by the droplet on the top of whiskers, but also initiated by the helical dislocations. The growth of TiCxN1-x whiskers is controlled by the vapor-liquid-solid mechanism as well as vapor-solid mechanism.


2012 ◽  
Vol 1433 ◽  
Author(s):  
D. Carole ◽  
A. Vo-Ha ◽  
M. Lazar ◽  
N. Thierry-Jebali ◽  
D. Tournier ◽  
...  

ABSTRACTSince a few years, VLS transport is studied not only for homoepitaxial SiC growth but also for SiC selective epitaxial growth (SEG). In this approach, a stacking of silicon and aluminum layers is deposited on the substrate and patterns are created by photolithography. Upon melting, the Al-Si liquid droplets are fed by propane to obtain the SEG of p-doped SiC. In this work, the growth mechanisms were deeper investigated, in particular the influence of the carrier gas (H2 or Ar) and the growth temperature. SEG experiments showed higher growth rates than those measured in the standard configuration (nonselective growth). Moreover, the SiC layers exhibited step-bunched areas characteristic of liquid phase growth but also areas with morphological features due to a disruption of the step-bunching growth mode.


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