Effect of Electric Field and Polarity on Light Emission in Metal-Insulator-Semiconductor Structure Thin-Film Electroluminescent Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.65 ◽

1983 ◽

Vol 22 (Part 1, No. 1) ◽

pp. 65-67

Author(s):

Jun-ichi Ohwaki ◽

Haruki Kozawaguchi ◽

Bunjiro Tsujiyama

Keyword(s):

Thin Film ◽

Electric Field ◽

Light Emission ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Electroluminescent Devices

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Characterization of sputtered yttria‐stabilized zirconia thin film and its application to a metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.351103 ◽

1992 ◽

Vol 71 (5) ◽

pp. 2309-2314 ◽

Author(s):

Yuji Miyahara

Keyword(s):

Thin Film ◽

Semiconductor Structure ◽

Yttria Stabilized Zirconia ◽

Stabilized Zirconia ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Zirconia Thin Film

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Tunneling in the metal-insulator-semiconductor structure—I. Silicon-silicon dioxide, II. Thin film Al Al2O3-CdS and Al-Al2O3-CdSe

IEEE Transactions on Electron Devices ◽

10.1109/t-ed.1966.15813 ◽

1966 ◽

Vol ED-13 (8/9) ◽

pp. 677-677 ◽

Author(s):

J. Shewchun ◽

A. Waxman

Keyword(s):

Thin Film ◽

Silicon Dioxide ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Silicon Silicon

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Temperature-Dependent Operation of InGaZnO Ferroelectric Thin-Film Transistors With a Metal-Ferroelectric-Metal-Insulator- Semiconductor Structure

IEEE Electron Device Letters ◽

10.1109/led.2021.3121677 ◽

2021 ◽

Vol 42 (12) ◽

pp. 1786-1789

Author(s):

Chen Sun ◽

Zijie Zheng ◽

Kaizhen Han ◽

Subhranu Samanta ◽

Jiuren Zhou ◽

...

Keyword(s):

Thin Film ◽

Thin Film Transistors ◽

Ferroelectric Thin Film ◽

Semiconductor Structure ◽

Temperature Dependent ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

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Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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The influence of space charge and electric field on the excitation efficiency in thin film electroluminescent devices

Journal of Applied Physics ◽

10.1063/1.360439 ◽

1995 ◽

Vol 78 (12) ◽

pp. 7259-7264 ◽

Author(s):

D. Corlatan ◽

K. A. Neyts ◽

P. De Visschere

Keyword(s):

Thin Film ◽

Electric Field ◽

Space Charge ◽

Electroluminescent Devices ◽

Excitation Efficiency

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Evidence for the existence of a metal-insulator-semiconductor junction at the electrode interfaces of CaCu3Ti4O12 thin film capacitors

Applied Physics Letters ◽

10.1063/1.2814043 ◽

2007 ◽

Vol 91 (20) ◽

pp. 202903 ◽

Author(s):

Guochu Deng ◽

Tomoaki Yamada ◽

Paul Muralt

Keyword(s):

Thin Film ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Thin Film Capacitors ◽

Semiconductor Junction

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On the triggering mechanism for the metal–insulator transition in thin film VO2 devices: electric field versus thermal effects

Journal of Materials Science ◽

10.1007/s10853-009-3442-7 ◽

2009 ◽

Vol 44 (19) ◽

pp. 5345-5353 ◽

Author(s):

Gokul Gopalakrishnan ◽

Dmitry Ruzmetov ◽

Shriram Ramanathan

Keyword(s):

Thin Film ◽

Electric Field ◽

Thermal Effects ◽

Insulator Transition ◽

Triggering Mechanism ◽

Metal Insulator Transition ◽

Metal Insulator ◽

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