Direct Observation of the Moving Liquid/Solid Interface during Nanosecond Pulsed Laser Annealing of Silicon

1997 ◽  
Vol 36 (Part 2, No. 4B) ◽  
pp. L455-L458 ◽  
Author(s):  
Der Ming Hsieh ◽  
Jun Yi Wang ◽  
Andy Ying Guey Fuh
Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda

2019 ◽  
Vol 21 (13) ◽  
pp. 7208-7219 ◽  
Author(s):  
Anagh Bhaumik ◽  
Jagdish Narayan

The formation of DNFs utilizing a low-temperature budget route will revolutionize their use in electronic, biomedical, and photonic devices.


1983 ◽  
Vol 13 ◽  
Author(s):  
B. C. Larson ◽  
C. W. White ◽  
T. S. Noggle ◽  
J. F. Barhorst ◽  
D. M. Mills

ABSTRACTNear surface temperatures and temperature gradients have been studied in silicon during pulsed laser annealing. The investigation was carried out using nanosecond resolution x-ray diffraction measurements made at the Cornell High Energy Synchrotron Source. Thermal-induced-strain analyses of these real-time, extended Bragg scattering measurements have shown that the lattice temperature reached the melting point during 15 ns, 1.1–1.5 J/cm2 ruby laser pulses and that the temperature of the liquid-solid interface remained at that temperature throughout the high reflectivity phase, after which time the surface temperature subsided rapidly. The temperature gradients below the liquid-solid interface were found to be in the range of 107°C/cm.


2018 ◽  
Vol 29 (45) ◽  
pp. 45LT02 ◽  
Author(s):  
Siddharth Gupta ◽  
Ritesh Sachan ◽  
Anagh Bhaumik ◽  
Jagdish Narayan

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