On Phase Transitions Stimulated in Amorphized Silicon by Nanosecond Pulsed Laser Annealing

1987 ◽  
Vol 103 (2) ◽  
pp. K87-K91 ◽  
Author(s):  
G. D. Ivlev ◽  
V. L. Malevich
Keyword(s):  
Phase Transitions ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

Time-resolved optical measurement of Si lattice temperature during nanosecond pulsed laser annealing

Physica B+C ◽  
1983 ◽  
Vol 117-118 ◽  
pp. 1024-1026 ◽  
Author(s):  
Kouichi Murakami ◽  
Hisayoshi Itoh ◽  
Kōki Takita ◽  
Kohzoh Masuda
Keyword(s):  
Laser Annealing ◽  
Optical Measurement ◽  
Pulsed Laser ◽  
Lattice Temperature ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

Time Resolved Tem of Laser-Induced Phase Transitions in a-Ce And a-Si/Al-Films

1986 ◽  
Vol 71 ◽  
Author(s):  
O. Bostanjoglo ◽  
F. E. Endruschat ◽  
W. Tornow
Keyword(s):  
Phase Transitions ◽  
Electron Microscope ◽  
Transmission Electron Microscope ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Amorphous Germanium ◽  
Time Resolved ◽  
Pulsed Laser Annealing ◽  
Transmission Electron ◽  
Potential Applications

AbstractThis paper presents an improved new method for studying the dynamics of laser induced phase transitions down to the submicron-nanosecond scale by means of a modified commercial Transmission Electron Microscope (TEM) /1/. Results on Pulsed Laser Annealing (PLA) of amorphous Germanium and a-Si/Al films are described. Potential applications and limits of this method are briefly discussed.

Direct conversion of carbon nanofibers into diamond nanofibers using nanosecond pulsed laser annealing

2019 ◽  
Vol 21 (13) ◽  
pp. 7208-7219 ◽  
Author(s):  
Anagh Bhaumik ◽  
Jagdish Narayan
Keyword(s):  
Low Temperature ◽  
Carbon Nanofibers ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Direct Conversion ◽  
Photonic Devices ◽  
Pulsed Laser Annealing ◽  
Nanosecond Pulsed Laser

The formation of DNFs utilizing a low-temperature budget route will revolutionize their use in electronic, biomedical, and photonic devices.

Experimental Study and Simulation of the Structure-Phase Transitions in Deposited Ge Layers during Pulsed Laser Annealing

2016 ◽  
Vol 247 ◽  
pp. 24-29 ◽  
Author(s):  
Herman A. Novikov ◽  
Rustem M. Bayazitov ◽  
Rafael M. Batalov ◽  
Ildar A. Faizrakhmanov ◽  
Gennadii D. Ivlev ◽  
...  
Keyword(s):  
Phase Transition ◽  
Phase Transitions ◽  
Laser Annealing ◽  
Radiation Power ◽  
Ion Beam ◽  
Thermal Contact ◽  
Pulsed Laser ◽  
Pulsed Laser Annealing ◽  
Temperature Dependences ◽  
Optical Probing

Ion-beam deposition of amorphous Ge layers on different substrates (silicon and quartz) has been performed. Deposited amorphous Ge layers were subjected to pulsed laser annealing (λ = 0.69 μm, τ = 80 ns). Simultaneously the optical probing of the Ge surface was carried out. The computer simulation of heating processes and phase transitions was performed taking into account the temperature dependences of film and substrates’ parameters and phase transition energies. The results of the dynamics of heating, melting, crystallization and plasma formation processes are well described by simulation data. It is shown that the threshold values for radiation power density and phase transition rates are determined mainly by thermophysical parameters of the substrates and thermal contact between Ge melt and substrate.

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