Variable Threshold AlGaAs/InGaAs Heterostructure Field-Effect Transistors with Paired Gates Fabricated Using the Wafer-Bonding Technique
2000 ◽
Vol 39
(Part 1, No. 4B)
◽
pp. 2435-2438
1999 ◽
2006 ◽
Vol 24
(3)
◽
pp. 624-628
◽
2020 ◽
Vol 8
◽
pp. 9-14
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