Broad-band Superluminescent Light Emitting Diodes Incorporating Quantum Dots in Compositionally Modulated Quantum Wells

2005 ◽  
Author(s):  
S.K. Ray ◽  
K.M. Groom ◽  
M.D. Beattie ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  
2006 ◽  
Vol 45 (4A) ◽  
pp. 2542-2545 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
R. A. Hogg

2006 ◽  
Vol 18 (1) ◽  
pp. 58-60 ◽  
Author(s):  
S.K. Ray ◽  
K.M. Groom ◽  
M.D. Beattie ◽  
H.Y. Liu ◽  
M. Hopkinson ◽  
...  

2006 ◽  
Author(s):  
S. K. Ray ◽  
K. M. Groom ◽  
M. D. Beattie ◽  
H. Y. Liu ◽  
M. Hopkinson ◽  
...  

1999 ◽  
Vol 86 (2) ◽  
pp. 1114-1118 ◽  
Author(s):  
M. Pophristic ◽  
F. H. Long ◽  
C. Tran ◽  
I. T. Ferguson ◽  
R. F. Karlicek

2014 ◽  
Vol 93 ◽  
pp. 270-275
Author(s):  
Pallab Bhattacharya ◽  
Thomas Frost ◽  
Animesh Banerjee ◽  
Shafat Jahangir

GaN-based InGaN/GaN self-organized quantum dots and InGaN quantum dots (disks) in GaN nanowires are important nanostructures with potential advantages over planar quantum wells, including luminescence at the longer visible wavelengths. We describe the epitaxy and characteristics of red-emitting InGaN/GaN quantum dot edge-emitting lasers and InGaN/GaN nanowire light emitting diodes, which can be used in a host of applications.


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