High On/Off Ratio in Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors with P-Type GaN Gate Contact

2006 ◽  
Vol 45 (No. 39) ◽  
pp. L1048-L1050 ◽  
Author(s):  
Takahiro Fujii ◽  
Norio Tsuyukuchi ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
Hiroshi Amano ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
P Type

Fabrication of enhancement-mode AlxGa1–xN/GaN junction heterostructure field-effect transistors with p-type GaN gate contact

2007 ◽  
Vol 4 (7) ◽  
pp. 2708-2711 ◽  
Author(s):  
T. Fujii ◽  
N. Tsuyukuchi ◽  
Y. Hirose ◽  
M. Iwaya ◽  
S. Kamiyama ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
P Type

Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas

2019 ◽  
Vol 115 (11) ◽  
pp. 112103 ◽  
Author(s):  
Fu Chen ◽  
Ronghui Hao ◽  
Guohao Yu ◽  
Xiaodong Zhang ◽  
Liang Song ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors

Properties of p-type heterostructure field effect transistors at cryogenic temperatures

1990 ◽  
Vol 228 (1-3) ◽  
pp. 472-475
Author(s):  
J.-H. Reemtsma ◽  
H. Meschede ◽  
W. Brockerhoff ◽  
K. Heime ◽  
W. Schlapp ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Cryogenic Temperatures ◽  
Heterostructure Field Effect Transistors ◽  
P Type

scholarly journals Nanoscale structural and chemical analysis of F-implanted enhancement-mode InAlN/GaN heterostructure field effect transistors

2018 ◽  
Vol 123 (2) ◽  
pp. 024902 ◽  
Author(s):  
Fengzai Tang ◽  
Kean B. Lee ◽  
Ivor Guiney ◽  
Martin Frentrup ◽  
Jonathan S. Barnard ◽  
...  
Keyword(s):  
Chemical Analysis ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

Control of Threshold Voltage of Enhancement-Mode AlxGa1-xN/GaN Junction Heterostructure Field-Effect Transistors Using p-GaN Gate Contact

2007 ◽  
Vol 46 (1) ◽  
pp. 115-118 ◽  
Author(s):  
Takahiro Fujii ◽  
Norio Tsuyukuchi ◽  
Yoshikazu Hirose ◽  
Motoaki Iwaya ◽  
Satoshi Kamiyama ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Enhancement Mode ◽  
Heterostructure Field Effect Transistors
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