Pulsed Green-Laser Annealing for Single-Crystalline Silicon Film Transferred onto Silicon wafer and Non-alkaline Glass by Hydrogen-Induced Exfoliation

2007 ◽  
Vol 46 (1) ◽  
pp. 21-23 ◽  
Author(s):  
Norihito Kawaguchi ◽  
Ryusuke Kawakami ◽  
Ken-ichiro Nishida ◽  
Naoya Yamamoto ◽  
Miyuki Masaki ◽  
...  
1984 ◽  
Vol 35 ◽  
Author(s):  
R. Mukai ◽  
N. Sasaki ◽  
T. Iwai ◽  
S. Kawamura ◽  
M. Nakano

ABSTRACTA new laser recrystallizing technique has been developedfor high density SOI-LSI's. This technique produces single crystalline silicon islands on an amorphous insulating layerwithout seed. Square windows are opened at arbitrary places in an antireflection cap over a polycrystalline film on an amorphous insulatinq layer. Grain boundaries of the polycrystalline Si in the window are removed completely at the subsequent laser-recrystallization step. Single crystalline silicon islands are formed by self-aligned etching of silicon film which was covered by the antireflection cap. This technique is an effective method for fabricating high density SOI-LSI's, since the singlecrystalline islands can be fabricated at arbitrarily selected places. Yield of the grain-boundary-free islands was 95% the size of the island is 1O x 20μm, and the irradiation oyerlap of laser-beam traces is 70%.


2015 ◽  
Vol 77 ◽  
pp. 279-285 ◽  
Author(s):  
Jinyoun Cho ◽  
Hae-Na-Ra Shin ◽  
Jieun Lee ◽  
Yoonseok Choi ◽  
Jongchul Lee ◽  
...  

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