Finite Element Approach of Current Density Distribution in Lead Acid Battery Grid

2016 ◽  
Vol 74 (1) ◽  
pp. 63-69
Author(s):  
P. Vyroubal ◽  
T. Kazda ◽  
P. Ba a
Keyword(s):  
Finite Element ◽  
Density Distribution ◽  
Current Density ◽  
Current Density Distribution ◽  
Lead Acid Battery ◽  
Finite Element Approach ◽  
Element Approach ◽  
Lead Acid

Bonding, Splitting and Thinning by Porous Si in ELTRAN®; SOI-Epi Wafer™

2001 ◽  
Vol 681 ◽  
Author(s):  
Kenji Yamagata ◽  
Takao Yonehara
Keyword(s):  
Finite Element Method ◽  
Finite Element ◽  
Film Thickness ◽  
Density Distribution ◽  
Layer Thickness ◽  
Porous Layer ◽  
Current Density ◽  
Current Density Distribution ◽  
Wafer Surface ◽  
Porous Si

ABSTRACTELTRAN is a unique technique to produce the SOI wafers using a porous Si material in semiconductor process. In ELTRAN process, it is required to form the porous Si layer on entire wafer surface uniformly, stably and mass productively without contaminations. In this investigation, we have carried out the simulation of current density distribution to unify the porous layer thickness by finite element method. Canon designed and completed an automatic anodization apparatus. As a result, we could produce the 8 and 6 inches porous Si wafers and ELTRAN SOI wafers stably. And we also developed successfully 300mm ELTRAN SOI wafers with excellent SOI film thickness uniformity.

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