Novel Exploration of Flat-Band Voltage Manipulation by Nitrogen Plasma Treatment for Advanced High-k/Metal-Gate CMOS Technology

2019 ◽  
Vol 89 (3) ◽  
pp. 55-59
Author(s):  
Jiaxin Yao ◽  
Zhaozhao Hou ◽  
Zhenhua Wu ◽  
Huaxiang Yin
Keyword(s):  
Plasma Treatment ◽  
Cmos Technology ◽  
Nitrogen Plasma ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
High K

Flat-band voltage shift in metal-gate/high- k /Si stacks

2011 ◽  
Vol 20 (9) ◽  
pp. 097303 ◽  
Author(s):  
An-Ping Huang ◽  
Xiao-Hu Zheng ◽  
Zhi-Song Xiao ◽  
Zhi-Chao Yang ◽  
Mei Wang ◽  
...  
Keyword(s):  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
Voltage Shift ◽  
High K

Electrical and Material Evaluation of the MOCVD TiN as Metal Gate Electrode for Advanced CMOS Technology

2006 ◽  
Vol 917 ◽  
Author(s):  
Raghunath Singanamalla ◽  
Judit Lisoni ◽  
Isabelle Ferain ◽  
Olivier Richard ◽  
Laure Carbonell ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Chemical Vapor ◽  
Cmos Technology ◽  
Flat Band ◽  
Thickness Variation ◽  
Organic Chemical ◽  
Gate Electrode ◽  
Metal Gate ◽  
Effective Work ◽  
Effective Work Function

AbstractThe electrical and material characterization of Ti(C)N deposited by metal organic chemical vapor deposition (MOCVD) technique, as metal gate electrode for advanced CMOS technology is investigated. The effects of the plasma treatment, post anneal treatment and the thickness variation of the Ti(C)N film on the flat band voltage (VFB) and effective work function (WF) of the Poly-Si/Ti(C)N/SiO2 Poly-Si/Ti(C)N/SiO2 gate stack s are reported. We found that both the in-situ plasma treatment and post anneal treatment help in reducing the carbon content (organic) in the film making it more metallic compared to the as-deposited films. However, the post anneal treatment was found to be a better option for getting rid of hydrocarbons as compared to plasma treatment from the gate dielectric integrity point of view. The thickness variation of post annealed Ti(C)N film ranged from 2.5 nm to 10 nm lead to WF shift of upto ~350 mV for both Poly-Si/Ti(C)N/SiO2 and Poly-Si/Ti(C)N/HfO2 gate stacks.

Comparative Investigation of Flat-Band Voltage Modulation by Nitrogen Plasma Treatment for Advanced HKMG Technology

2018 ◽  
Vol 7 (8) ◽  
pp. Q152-Q158 ◽  
Author(s):  
Jiaxin Yao ◽  
Huaxiang Yin ◽  
Zhenhua Wu ◽  
Jianfeng Gao ◽  
Qingzhu Zhang ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Comparative Investigation ◽  
Nitrogen Plasma ◽  
Flat Band ◽  
Flat Band Voltage

Modelling and characterisation of flat-band roll-off behaviours in LaOx capped high-K/metal-gate NMOSFET with 28 nm CMOS technology

2014 ◽  
Vol 11 (12) ◽  
pp. 1039
Author(s):  
Wen Han Hung ◽  
Feng Renn Juang ◽  
Yean Kuen Fang ◽  
Tzyy Ming Cheng
Keyword(s):  
Cmos Technology ◽  
Flat Band ◽  
Metal Gate ◽  
High K ◽  
28 Nm

Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks

2010 ◽  
Vol 97 (13) ◽  
pp. 132908 ◽  
Author(s):  
X. H. Zheng ◽  
A. P. Huang ◽  
Z. S. Xiao ◽  
Z. C. Yang ◽  
M. Wang ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Flat Band ◽  
Flat Band Voltage ◽  
Metal Gate ◽  
High K
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