Modelling and characterisation of flat-band roll-off behaviours in LaOx capped high-K/metal-gate NMOSFET with 28 nm CMOS technology

2014 ◽  
Vol 11 (12) ◽  
pp. 1039
Author(s):  
Wen Han Hung ◽  
Feng Renn Juang ◽  
Yean Kuen Fang ◽  
Tzyy Ming Cheng
Keyword(s):  
Cmos Technology ◽  
Flat Band ◽  
Metal Gate ◽  
High K ◽  
28 Nm

Large signal microwave performances of high-k metal gate 28 nm CMOS technology

2012 ◽  
Vol 48 (25) ◽  
pp. 1627-1629 ◽  
Author(s):  
R. Ouhachi ◽  
A. Pottrain ◽  
D. Gloria ◽  
C. Gaquière ◽  
D. Ducatteau ◽  
...  
Keyword(s):  
Cmos Technology ◽  
Large Signal ◽  
Metal Gate ◽  
High K ◽  
28 Nm

RF power potential of High-k metal gate 28 nm CMOS technology

2013 ◽  
Author(s):  
R. Ouhachi ◽  
A. Pottrain ◽  
D. Ducatteau ◽  
E. Okada ◽  
C. Gaquiere
Keyword(s):  
Cmos Technology ◽  
Rf Power ◽  
Metal Gate ◽  
High K ◽  
28 Nm

Investigation of low-frequency noise of 28-nm technology process of high-k/metal gate p-MOSFETs with fluorine incorporation

2016 ◽  
Vol 115 ◽  
pp. 7-11
Author(s):  
Tsung-Hsien Kao ◽  
Shoou-Jinn Chang ◽  
Yean-Kuen Fang ◽  
Po-Chin Huang ◽  
Bo-Chin Wang ◽  
...  
Keyword(s):  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
High K ◽  
Technology Process ◽  
28 Nm

A 4.0 GHz 291 Mb Voltage-Scalable SRAM Design in a 32 nm High-k + Metal-Gate CMOS Technology With Integrated Power Management

2010 ◽  
Vol 45 (1) ◽  
pp. 103-110 ◽  
Author(s):  
Yih Wang ◽  
Uddalak Bhattacharya ◽  
Fatih Hamzaoglu ◽  
Pramod Kolar ◽  
Yong-Gee Ng ◽  
...  
Keyword(s):  
Power Management ◽  
Cmos Technology ◽  
Metal Gate ◽  
High K ◽  
Sram Design

High performance FDSOI CMOS technology with metal gate and high-k

2005 ◽  
Author(s):  
B. Doris ◽  
Y.H. Kim ◽  
B.P. Linder ◽  
M. Steen ◽  
V. Narayanan ◽  
...  
Keyword(s):  
High Performance ◽  
Cmos Technology ◽  
Metal Gate ◽  
High K
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