Intrinsic Point Defects and Impurities in Silicon Crystal Growth

2002 ◽  
Vol 149 (3) ◽  
pp. G167 ◽  
Author(s):  
V. V. Voronkov ◽  
R. Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Silicon Crystal ◽  
Intrinsic Point Defects ◽  
Defects And Impurities

Intrinsic Point Defects in Silicon Crystal Growth

2011 ◽  
Vol 178-179 ◽  
pp. 3-14 ◽  
Author(s):  
Vladimir V. Voronkov ◽  
Robert Falster
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Vacancy Concentration ◽  
Silicon Crystal ◽  
Growth Conditions ◽  
Intrinsic Point Defects ◽  
Silicon Crystals ◽  
Low Concentrations ◽  
Different Populations ◽  
Vacancy Concentrations

In dislocation-free silicon, intrinsic point defects – either vacancies or self-interstitials, depending on the growth conditions - are incorporated into a growing crystal. Their incorporated concentration is relatively low (normally, less than 1014 cm-3 - much lower than the concentration of impurities). In spite of this, they play a crucial role in the control of the structural properties of silicon materials. Modern silicon crystals are grown mostly in the vacancy mode and contain many vacancy-based agglomerates. At typical grown-in vacancy concentrations the dominant agglomerates are voids, while at lower vacancy concentrations there are different populations of joint vacancy-oxygen agglomerates (oxide plates). Larger plates – formed in a narrow range of vacancy concentration and accordingly residing in a narrow spatial band – are responsible for the formation of stacking fault rings in oxidized wafers. Using advanced crystal growth techniques, whole crystals can be grown at such low concentrations of vacancies or self-interstitials such that they can be considered as perfect.

scholarly journals Determination of Physical Properties for Point Defects during CZ Silicon Crystal Growth by High-Precision Thermal Simulations

2011 ◽  
Vol 75 (12) ◽  
pp. 657-664 ◽  
Author(s):  
Manabu Nishimoto ◽  
Kozo Nakamura ◽  
Masataka Hourai ◽  
Toshiaki Ono ◽  
Wataru Sugimura ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Physical Properties ◽  
High Precision ◽  
Point Defects ◽  
Silicon Crystal ◽  
Thermal Simulations

Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

The Formation of Defects Degrading Gate Oxide Integrity During CZ-Si Crystal Growth

1995 ◽  
Vol 378 ◽  
Author(s):  
Y. Tsumori ◽  
K. Nakai ◽  
T. Iwasaki ◽  
H. Haga ◽  
K. Kojima ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Point Defects ◽  
Defect Density ◽  
Gate Oxide ◽  
Cooling Time ◽  
Intrinsic Point Defects ◽  
Pair Annihilation ◽  
Temperature Ranges ◽  
Gate Oxide Integrity

AbstractThe formation of grown-in defects degrading the gate oxide integrity (GOI) has been studied. The growth-halting experiments were carried out to investigate the temperature ranges at which the formation of the defects was promoted or suppressed. GOI is improved in the crystal regions slowly cooled above 1330°C and between 1060°C and 1100°C. It is degraded in the crystal regions held below 1060°C. In the peripheral of the crystals, those temperature ranges are about 30°C lower. The defects are formed and grown below 1060°C in the center part of the crystal. The defect density is decreased with cooling time between 1060°C and 1100°C. These phenomena are considered to be closely related with reactions of intrinsic point defects, that is, the pair annihilation or the aggregation. The temperatures at which the pair annihilation and the aggregation of the point defects occur are dependent upon the supersaturation of the point defects.

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