Behavior Of Point Defects In CZ Silicon Crystal Growth-Formation Of Polyhedral Cavities And Oxidation-Induced Stacking Fault Nuclei

1996 ◽  
Vol 442 ◽  
Author(s):  
K Tanahashi ◽  
N. Inoue ◽  
Y. Mizokawa
Keyword(s):  
Crystal Growth ◽  
Ternary System ◽  
Point Defects ◽  
Silicon Crystal ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Czochralski Silicon ◽  
Growth Formation

AbstractThe origin of oxidation–induced stacking faults (OSF) and polyhedral cavities in as–grown Czochralski silicon (CZ–Si) crystals is discussed with comparison to the behavior of previously investigated grown–in oxide precipitates. The incorporation, diffusion and reaction in the vacancy, self–interstitial and oxygen ternary system are considered to discuss the origin of grown–in defects.

Measurement of temperature gradient in Czochralski silicon crystal growth

2001 ◽  
Vol 229 (1-4) ◽  
pp. 6-10 ◽  
Author(s):  
Xinming Huang ◽  
Toshinori Taishi ◽  
Tiefeng Wang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Silicon Crystal ◽  
Czochralski Silicon

Investigation of nitrogen behaviors during Czochralski silicon crystal growth

2011 ◽  
Vol 318 (1) ◽  
pp. 178-182 ◽  
Author(s):  
Xuegong Yu ◽  
Deren Yang ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Silicon Crystal ◽  
Czochralski Silicon

ON THE ROLE OF STACKING FAULTS IN SOME PROBLEMS OF GLIDE AND TWINNING IN CUBIC METALS

1967 ◽  
Vol 45 (2) ◽  
pp. 481-492 ◽  
Author(s):  
B. Escaig ◽  
G. Fontaine ◽  
J. Friedel
Keyword(s):  
Point Defects ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Dislocation Network ◽  
Thermal Variation ◽  
Temperature Dependent ◽  
Cubic Metals ◽  
Thermally Activated ◽  
Stacking Fault Energies

The possible role of stacking faults is discussed in some problems of glide and twinning of cubic metals, especially at low temperatures.The first part analyzes a model for the thermal variation of macroyield in b.c.c. metals. If one assumes that the dislocations of such metals split along either the (110) or the (112) planes, the screw dislocations will be sessile. The strong temperature variation of macroyield could be due to the thermally activated slip of such screws, previously developed at lower stresses during the less temperature-dependent microyield. Reasonably high stacking-fault energies are required for satisfactory numerical fits.The second part studies the influence of a dense dislocation network on the propagation of a stacking fault. The friction force acting on the partial that propagates the fault must be taken into account when deducing a stacking-fault energy from the stress at which stacking faults develop in a strongly work-hardened (f.c.c.) metal. The trails of dipoles left at each tree crossed should prevent any creation of point defects; they should lead, after the faults have propagated some length, to its multiplication into a twin or martensitic lamella. The analogies with problems of slip bauds and dipole formation in easy glide are stressed.

Optimization of 150 mm 4H SiC Substrate Crystal Quality

2018 ◽  
Vol 924 ◽  
pp. 11-14 ◽  
Author(s):  
Ian Manning ◽  
Gil Yong Chung ◽  
Edward Sanchez ◽  
Yu Yang ◽  
Jian Qiu Guo ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Marked Reduction ◽  
Stacking Faults ◽  
Continuous Optimization ◽  
Stacking Fault ◽  
Thermal Parameters ◽  
Crystal Quality ◽  
Growth Processes ◽  
Fault Density

Continuous optimization of bulk 4H SiC PVT crystal growth processes has yielded an improvement in 150 mm wafer shape, as well as a marked reduction in stacking fault density. Mean wafer bow and warp decreased by 26% and 14%, respectively, while stacking faults were nearly eliminated from wafers produced using the refined process. These quality enhancements corresponded to an adjustment to key thermal parameters predicted to control intrinsic crystal stresses, and a reduction in crystal dome curvature.

Sign in / Sign up

Export Citation Format

Share Document