Nanocrystalline Diamond Thin Films: High Temperature Dielectric Properties and Wide Bandgap Semiconductor Device Passivation Applications

2010 ◽  
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Dielectric Properties ◽  
Semiconductor Device ◽  
Wide Bandgap ◽  
Nanocrystalline Diamond ◽  
Wide Bandgap Semiconductor ◽  
Diamond Thin Films

Photoemission properties of nanocrystalline diamond thin films on silicon

2015 ◽  
Vol 33 (3) ◽  
pp. 03C105 ◽  
Author(s):  
Jean-Paul Mazellier ◽  
Cyril Di Giola ◽  
Pierre Legagneux ◽  
Clément Hébert ◽  
Emmanuel Scorsone ◽  
...  
Keyword(s):  
Thin Films ◽  
Nanocrystalline Diamond ◽  
Diamond Thin Films

Epitaxial growth of β-Ga2O3 (-201) thin film on fourfold symmetry CeO2 (001) substrate for heterogeneous integrations

2021 ◽  
Author(s):  
Xiao Tang ◽  
Kuanghui Li ◽  
Che-Hao Liao ◽  
Dongxing Zheng ◽  
chen Liu ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Epitaxial Growth ◽  
Gas Sensors ◽  
High Power ◽  
Wide Bandgap ◽  
Semiconductor Material ◽  
Uv Detectors ◽  
Wide Bandgap Semiconductor ◽  
Fourfold Symmetry

β-Ga2O3 is a wide bandgap semiconductor material promising for many fields such as gas sensors, UV detectors, and high power electronics. Until now, most epitaxial β-Ga2O3 thin films could only...

Thermal Activation and Cathodoluminescence Measurements of Tb3+-Doped a-(SiC)1-x(AlN)x Thin Films

2010 ◽  
Vol 645-648 ◽  
pp. 459-462 ◽  
Author(s):  
Oliver Erlenbach ◽  
Gonzalo Gálvez ◽  
Jorge Andres Guerra ◽  
Francisco De Zela ◽  
Roland Weingärtner ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Emission Intensity ◽  
Thermal Activation ◽  
Wide Bandgap ◽  
Isochronal Annealing ◽  
Strong Increase ◽  
Wide Bandgap Semiconductor ◽  
Semiconductor Thin Films

We produce amorphous terbium doped wide bandgap semiconductor thin films of the pseudobinary compound (SiC)1 x(AlN)x by rf triple magnetron sputtering. Cathodoluminescence measurements performed at samples having different compositions x show pronounced intra 4f shell transition peaks of the trivalent terbium. Thermal activation of the terbium emission by isochronal annealing of the films leads to a strong increase in emission intensity.

Development of Wide Bandgap Semiconductor Photonic Device Structures by Excimer Laser Micromachining

1999 ◽  
Vol 595 ◽  
Author(s):  
Qiang Zhao ◽  
Michael Lukitsch ◽  
Jie Xu ◽  
Gregory Auner ◽  
Ratna Niak ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Ablation Rate ◽  
Laser Micromachining ◽  
Wide Bandgap ◽  
Wide Bandgap Semiconductor ◽  
Excimer Laser Ablation ◽  
Sapphire Substrates ◽  
Aspect Ratios ◽  
Device Structures

AbstractExcimer laser ablation rates of Si (111) and AlN films grown on Si (111) and r-plane sapphire substrates were determined. Linear dependence of ablation rate of Si (111) substrate, sapphire and AlN thin films were observed. Excimer laser micromachining of the AlN thin films on silicon (111) and SiC substrates were micromachined to fabricate a waveguide structure and a pixilated structure. This technique resulted in clean precise machining of AlN with high aspect ratios and straight walls.

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