scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

scholarly journals Deposition time and annealing effects on morphological and optical properties of ZnS thin films prepared by chemical bath deposition

2019 ◽  
Vol 37 (3) ◽  
pp. 404-416
Author(s):  
N. Chabou ◽  
B. Birouk ◽  
M.S. Aida ◽  
J.P. Raskin
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Scanning Electron Microscopy ◽  
Chemical Bath Deposition ◽  
Deposition Time ◽  
Ammonium Hydroxide ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

AbstractNanocrystalline zinc sulfide thin films were prepared on glass substrates by chemical bath deposition method using aqueous solutions of zinc chloride, thiourea ammonium hydroxide along with non-toxic complexing agent trisodium citrate in alkaline medium at 80 °C. The effect of deposition time and annealing on the properties of ZnS thin films was investigated by X-ray diffraction, scanning electron microscopy, optical transmittance spectroscopy and four-point probe method. The X-ray diffraction analysis showed that the samples exhibited cubic sphalerite structure with preferential orientation along 〈2 0 0〉 direction. Scanning electron microscopy micrographs revealed uniform surface coverage, UV-Vis (300 nm to 800 nm) spectrophotometric measurements showed transparency of the films (transmittance ranging from 69 % to 81 %), with a direct allowed energy band gap in the range of 3.87 eV to 4.03 eV. After thermal annealing at 500 °C for 120 min, the transmittance increased up to 87 %. Moreover, the electrical conductivity of the deposited films increased with increasing of the deposition time from 0.35 × 10−4 Ω·cm−1 to 2.7 × 10−4 Ω·cm−1.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

scholarly journals Structural and Magnetic Properties of FePd Thin Film Synthesized by Electrodeposition Method

Materials ◽  
2020 ◽  
Vol 13 (6) ◽  
pp. 1454
Author(s):  
Gabriele Barrera ◽  
Federico Scaglione ◽  
Matteo Cialone ◽  
Federica Celegato ◽  
Marco Coïsson ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetic Properties ◽  
Deposition Time ◽  
Magnetic Measurements ◽  
X Ray Diffraction ◽  
X Ray ◽  
Fundamental Properties ◽  
Magnetic Features ◽  
Application Fields

Bimetallic nanomaterials in the form of thin film constituted by magnetic and noble elements show promising properties in different application fields such as catalysts and magnetic driven applications. In order to tailor the chemical and physical properties of these alloys to meet the applications requirements, it is of great importance scientific interest to study the interplay between properties and morphology, surface properties, microstructure, spatial confinement and magnetic features. In this manuscript, FePd thin films are prepared by electrodeposition which is a versatile and widely used technique. Compositional, morphological, surface and magnetic properties are described as a function of deposition time (i.e., film thickness). Chemical etching in hydrochloric acid was used to enhance the surface roughness and help decoupling crystalline grains with direct consequences on to the magnetic properties. X-ray diffraction, SEM/AFM images, contact angle and magnetic measurements have been carried out with the aim of providing a comprehensive characterisation of the fundamental properties of these bimetallic thin films.

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

Lattice parameters and optical absorption of CuIn1-xGaxSe2 thin films

1999 ◽  
Vol 77 (7) ◽  
pp. 515-520
Author(s):  
AAI Al-Bassam
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Grain Size ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Cubic Structure ◽  
Ga Content

Thin film polycrystalline solar cells based on CuIn1–xGaxSe2 have been fabricated and studied with x values from 0 to 1.0. The lattice parameters, grain size, and band gap were measured. Crystal structure and X-ray data of CuIn1–xGaxSe2 were determined using X-ray diffractometry. These materials had a cubic structure with x ≥ 0.5 and a tetragonal structure with x ≤ 0.5. The lattice constants vary linearly with composition. Grain size was measured using X-ray diffraction where the grain size increased linearly with Ga content. A grain size of 1.83-3.52 μm was observed with x ≤ 0.5, while it increased to 4.53 μm for x = 0.58.PACS No.: 70.73

Effect of Second Complexing Agent of N2H4 on the Optical and Structural Properties of ZnS Thin Films

2013 ◽  
Vol 591 ◽  
pp. 297-300
Author(s):  
Huan Ke ◽  
Shu Wang Duo ◽  
Ting Zhi Liu ◽  
Hao Zhang ◽  
Xiao Yan Fei
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Structural Properties ◽  
Band Gaps ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
Sphalerite Structure ◽  
X Ray ◽  
Glass Substrates ◽  
Zns Films

ZnS films have been deposited on glass substrates by chemical bath deposition (CBD). The optical and structural properties were analyzed by UV-VIS spectrophotometer and X-ray diffraction (XRD). The results showed that the prepared thin films from the solution using N2H4 as second complexing agent were thicker than those from the solution without adding N2H4 in; this is due to using second complexing agent of N2H4, the deposition mechanisms change which is conductive to heterogeneous deposition. When using N2H4 as second complexing agent, the crystallinity of ZnS thin films improved with a significant peak at 2θ=28.96°which can be assigned to the (111) reflection of the sphalerite structure. The transmittances of the prepared films from the solution adding N2H4 in as second complexing agent were over 85%, compared to those from the solution without N2H4 (over 95%). The band gaps of the ZnS films from the solution using N2H4 as second complexing agent were larger (about 4.0eV) than that from those from the solution without N2H4 (about 3.98eV), which indicated that the prepared ZnS films from the solution adding N2H4 in as second complexing agent were better used as buffer layer of solar cells with adequate optical properties. In short, using N2H4 as second complexing agent, can greatly improve the optical and structural properties of the ZnS thin films.

Chemical Bath Deposition of CdS Thin Films: Growth and Structural Studies

1996 ◽  
Vol 426 ◽  
Author(s):  
Yuming Zhu ◽  
Dull Mao ◽  
D. L. Williamson ◽  
J. U. Trefny
Keyword(s):  
Thin Films ◽  
Structural Properties ◽  
Deposition Time ◽  
Layer Structure ◽  
Layer Growth ◽  
X Ray Diffraction ◽  
X Ray ◽  
Thiourea Solution ◽  
Cds Thin Films ◽  
Cds Films

AbstractChemical-bath-deposited CdS thin films from an ammonia-thiourea solution have been studied by x-ray diffraction, surface profilometry, ellipsometry, and other techniques. The compactness of the CdS films, structural properties of the films, and the growth mechanism have been investigated. For the deposition conditions used, we found that the film compactness reaches its maximum at a deposition time of 35 minutes. Films grown at longer deposition times are less compact, consistent with the CdS duplex layer structure proposed previously. This transition from compact layer growth to porous layer growth is important for depositing CdS films in solar cell applications. Based on x-ray diffraction (XRD) studies, we were able to determine the crystal phase, lattice constant, and other structural properties.

Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

Effect of Deposition Time on Structure of TiAlN Thin Films Deposited by Reactive DC Magnetron Co-Sputtering

2017 ◽  
Vol 866 ◽  
pp. 318-321 ◽  
Author(s):  
Nirun Witit-Anun ◽  
Adisorn Buranawong
Keyword(s):  
Thin Films ◽  
Elemental Composition ◽  
Deposition Time ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
X Ray ◽  
Titanium Aluminum ◽  
Titanium Aluminum Nitride ◽  
Deposited Films ◽  
Section Analysis

Titanium aluminum nitride (TiAlN) thin films were deposited by reactive DC magnetron co-sputtering technique on Si substrate. The effect of deposition time on the structure of the TiAlN films was investigated. The crystal structure, surface morphology, thickness and elemental composition were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM) and energy dispersive X-ray spectroscopy (EDS) technique, respectively. The results showed that, all the as-deposited films were formed as a (Ti,Al)N solid solution. The as-deposited thin films exhibited a nanostructure with a crystallite size of less than 30 nm. The film thickness increase from 115 nm to 329 nm, while the lattice parameter decrease from 4.206 Å to 4.196 Å, with increasing of the deposition time. Cross section analysis by FE-SEM showed compact columnar and dense morphology as a result of increasing the deposition time. The elemental composition of the as-deposited films varied with the deposition time.

Effect of Deposition Time on Structural and Optical Properties of ZnO Thin Films Deposited by Spray Pyrolysis

2019 ◽  
Vol 397 ◽  
pp. 81-87 ◽  
Author(s):  
Farid Khediri ◽  
Abdelkader Hafdallah ◽  
Mouna Bouhelal
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Spray Pyrolysis ◽  
Deposition Time ◽  
Spray Pyrolysis Technique ◽  
Precursor Solution ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
X Ray

In this work Zinc oxide thin films prepared by spray pyrolysis technique. A set of ZnO thin films were deposited with various deposition times, on glass substrate at 350 °C. The precursor solution is formed with zinc acetate in distilled methanol with 0.1 molarity. The deposition time was ranged from 2 to 8 min. The structural and optical properties of those films were examined by X-ray diffraction (XRD) and ultraviolet-visible spectrometer (UV). X-ray diffraction patterns of the ZnO thin films showed polycrystalline hexagonal wurtzite structure and the preferred orientation was along (002) plane when the grain size varied between 9.66 and 16.67nm. ZnO thin films were highly transparent in the visible with the maximum transmittance of 85% and the optical band gap was found between 3.25 and 3.28 eV.

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