Ferroelectric Thin Films of Bismuth Titanate Prepared by Mocvd

1991 ◽  
Vol 243 ◽  
Author(s):  
H. Wang ◽  
L. W. Fu ◽  
S. X. Shang ◽  
S. Q. Yu ◽  
X. L. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Dispersion Analysis ◽  
Ferroelectric Thin Films ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Mocvd Technique

AbstractThe ferroelectric thin films of bismuth titanate (Bi4Ti3O12) have been prepared by metalorganic chemical vapor deposition ( MOCVD) technique at atmosphere. The triphenyl bismuth (Bi(CaH5 ) 3)and tetrabutyl titanate (C16H36O4Ti) were used as precursors. Dense Bi4Ti3 O12 films with smooth shinning surface have been grown on Si( 100) substrates at 550°C whithout postannealing. The as- grown films were characterized by X-ray diffraction analysis (XRD), scanning electron microscopy (SEM) and energy dispersion analysis ( EDAX). The films showed well-ordered crystallinity with an (001)preffered orientation. The influence of growth parameters on deposition rate, composition and morphology of as-grown films was also discussed.

scholarly journals Influence of the growth parameters of TiO2 thin films deposited by the MOCVD method

Cerâmica ◽  
2002 ◽  
Vol 48 (305) ◽  
pp. 38-42 ◽  
Author(s):  
M. I. B. Bernardi ◽  
E. J. H. Lee ◽  
P. N. Lisboa-Filho ◽  
E. R. Leite ◽  
E. Longo ◽  
...  
Keyword(s):  
Thin Films ◽  
Growth Parameters ◽  
Structural Characteristics ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Tio2 Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Deposition Parameters

The synthesis of TiO2 thin films was carried out by the Organometallic Chemical Vapor Deposition (MOCVD) method. The influence of deposition parameters used during growth on the final structural characteristics was studied. A combination of the following experimental parameters was studied: temperature of the organometallic bath, deposition time, and temperature and substrate type. The high influence of those parameters on the final thin film microstructure was analyzed by scanning electron microscopy with electron dispersive X-ray spectroscopy, atomic force microscopy and X-ray diffraction.

Sol-Gel derived Bi4-xNdxTi3O12 Thin Films and Their Characterization

2002 ◽  
Vol 737 ◽  
Author(s):  
R.E. Melgarejo ◽  
M.S. Tomar ◽  
A. Hidalgo ◽  
R.S. Katiyar
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
X Ray Diffraction ◽  
X Ray ◽  
Complete Solid Solution ◽  
Sol Gel Process ◽  
Ferroelectric Memory ◽  
Initial Results

ABSTRACTNd substituted bismuth titanate Bi4-xNdxTi3O12 were synthesized by sol-gel process and thin films were deposited on Pt substrate (Pt/TiO2/SiO2/Si) by spin coating. Thin films, characterized by X-ray diffraction and Raman spectroscopy, shows complete solid solution up to the composition x < 1. Initial results indicate that the ferroelectric polarization increases with increasing Nd content in the film with 2Pr = 50μC/cm2 for x = 0.46, which may have application in non-volatile ferroelectric memory devices.

scholarly journals Optimization of Chemical Bath Deposited Mercury Chromium Sulphide Thin Films on Glass Substrate

2013 ◽  
Vol 2013 ◽  
pp. 1-4
Author(s):  
H. B. Patil ◽  
S. V. Borse
Keyword(s):  
Thin Films ◽  
Glass Substrate ◽  
Deposition Time ◽  
Growth Parameters ◽  
Complexing Agent ◽  
X Ray Diffraction ◽  
X Ray ◽  
Edax Analysis ◽  
Cubic Structure ◽  
Semiconducting Thin Films

Semiconducting thin films of ternary () have been deposited on glass substrate by the simple and economical chemical bath deposition method. We report the deposition and optimization of the solution growth parameters such as temperature, complexing agent, thiourea, and deposition time that maximizes the thickness of the deposited thin film. The X-ray diffraction deposited thin films having cubic structure. The thin films were uniform and adherent to substrate. The composition was found homogeneous and stoichiometric by EDAX analysis.

Sol-Gel Synthesis and Characterization of Nanocrystalline Bi4Ti3O12 Powders

2014 ◽  
Vol 997 ◽  
pp. 359-362 ◽  
Author(s):  
Chun Hong Ma ◽  
Xue Lin ◽  
Liang Wang ◽  
Yong Sheng Yan
Keyword(s):  
Phase Inversion ◽  
Bismuth Titanate ◽  
Sol Gel ◽  
Tetrabutyl Titanate ◽  
X Ray Diffraction ◽  
X Ray ◽  
Transmission Electron ◽  
Sol Gel Synthesis ◽  
Source Materials

Nanocrystalline bismuth titanate (Bi4Ti3O12; BTO) powders were successfully prepared by the sol-gel method, using bismuth nitrate (Bi(NO3)3·5H2O) and tetrabutyl titanate (Ti(OC4H9)4) as source materials, acetic anhydride and ethanediol as solvents. The thermal decomposition and phase inversion process of the gel precursors were studied by using differential thermal analysis (DTA). The crystal structures and microstructures of BTO powders were investigated by using x-ray diffraction (XRD), and transmission electron microscope (TEM). The crystallization of amorphous bismuth titanate has been discussed. The effect of sintering temperature on the structure and morphology of BTO was investigated. At 644 oC and above, BTO powder undergoes a phase transformation from tetragonal to orthorhombic. At 900 oC, the purified orthorhombic BTO nanocrystals were obtained.

Preparation of AlN thin films by means of CVD using iodide source under atmospheric pressure

2007 ◽  
Vol 1040 ◽  
Author(s):  
Hiroki Iwane ◽  
Naoki Wakiya ◽  
Naonori Sakamoto ◽  
Takato Nakamura ◽  
Hisao Suzuki
Keyword(s):  
Thin Films ◽  
Residual Stress ◽  
Sapphire Substrate ◽  
Atmospheric Pressure ◽  
Chemical Vapor ◽  
Lattice Parameter ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Aluminum Iodide

AbstractEpitaxial aluminum nitride (AlN) thin films were successfully prepared on the (0001) sapphire substrate by chemical vapor deposition (CVD) using aluminum iodide (AlI3) and ammonia (NH3) under atmospheric pressure at 750 ºC. The crystallographic relationship between AlN thin films and Al2O3 substrate is in the following; AlN(0001)//Al2O3(0001) and AlN[1010]//Al2O3[1120]. Lattice parameters of AlN thin film measured by X-ray diffraction revealed that c=0.498 and a=0.311 nm, respectively. Residual stress estimated by modified sin2ψ method was 0.38 GPa in compressive stress. Cross-sectional TEM observation revealed that an interlayer lies between the AlN films and the sapphire substrate. It was suggested that relaxation of residual stress caused by the mismatching of lattice parameter and thermal expansion coefficient was brought about by the interlayer.

Synthesis of Crystalline C3N4 films and the new C-N Phases

1996 ◽  
Vol 441 ◽  
Author(s):  
Yan Chen ◽  
D. J. Johnson ◽  
R. H. Prince ◽  
Liping Guo ◽  
E. G. Wang
Keyword(s):  
Electron Microscopy ◽  
Vapor Deposition ◽  
Growth Parameters ◽  
Chemical Vapor ◽  
Monoclinic Structure ◽  
X Ray Diffraction ◽  
X Ray ◽  
Lattice Constants ◽  
Transmission Electron ◽  
Hot Filament

AbstractCrystalline C-N films composed of α- and β-C3N4, as well as other C-N phases, have been synthesized via bias-assisted hot-filament chemical vapor deposition using a gas mixture of nitrogen and methane. Scanning electron microscopy(SEM), energy dispersive X-ray (EDX) analysis, X-ray diffraction (XRD) and transmission electron microscopy (TEM) were used to characterize the films. Lattice constants of the α- and β-C3N4 phases obtained coincide very well with the theoretical values. In addition to these phases, two new C-N phases in the films have been identified by TEM and XRD; one having a tetragonal structure with a = 5.65 Å, c = 2.75Å, and the second having a monoclinic structure with a = 5.065 Å, b= 11.5 Å, c = 2.801 Å and β = 96°. Their stoichiometric values and atomic arrangements have not yet been identified. Furthermore, variation in growth parameters, for example methane concentration, bias voltage, etc., can yield preferred growth of different C-N phases.

Effects on Structural, Electronic Transport & Optical Properties of Doped & Undoped ZnTe Thin Films for CdTe/CdS Solar Cells

2012 ◽  
Vol 510-511 ◽  
pp. 89-97
Author(s):  
G.H. Tariq ◽  
M. Anis-ur-Rehman
Keyword(s):  
Thin Films ◽  
Buffer Layer ◽  
Growth Parameters ◽  
Optical Measurements ◽  
X Ray Diffraction ◽  
Contact Materials ◽  
X Ray ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Znte Thin Films

To overcome the naturally existing Schottky barrier problem between p-CdTe and any metal, an intermediate semiconductor thin buffer layer is a better choice prior to the final metallization for contact. Among many investigated back contact materials the ZnTe is suitable as a buffer layer. ZnTe thin films were deposited onto glass substrates by the thermal evaporation technique under vacuum ~2×10-5mbar. Undoped ZnTe thin films are highly resistive, extrinsic doping of Cu was made to improve the electrical conductivity. Films were doped by immersing in Cu NO32.5H2O solutions for Cu doping. To optimize the growth parameters the prepared films were characterized using various techniques. The structural analysis of these films was performed by X-ray diffraction (XRD) technique and optical transmission. X-ray diffraction identified the phases present in these films and also observed that the prepared films were polycrystalline. Also the spectral dependence of absorption coefficient was determined from spectrophotometer. Energy band gap index were calculated from obtained optical measurements data.

PROPERTIES OF (Bi0.92Ce0.08)2Ti2O7 THIN FILMS PREPARED ON Si(100) BY CHEMICAL SOLUTION DECOMPOSITION

2009 ◽  
Vol 16 (06) ◽  
pp. 869-873 ◽  
Author(s):  
GUANGHUI XU ◽  
XIANGYANG JING ◽  
YIN ZHANG ◽  
BAIBIAO HUANG
Keyword(s):  
Thin Films ◽  
Phase Stability ◽  
Decomposition Method ◽  
Dielectric Constants ◽  
Ferroelectric Thin Films ◽  
Chemical Solution ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ce Modification ◽  
P Type

( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films have been successfully prepared on P-type Si (100) substrates by a chemical solution decomposition method. The structural properties of the films were studied by X-ray diffraction. The phase stability of Bi 2 Ti 2 O 7 was improved after Ce ions were doped. The dielectric constants of ( Bi 0.92 Ce 0.08)2 Ti 2 O 7 thin films annealed at 650° and 700°C were higher than that of Bi 2 Ti 2 O 7 without Ce modification. The thin films annealed at 650°C showed the highest permittivity. The memory windows in the C – V loops were studied, indicating that the thin films were not ferroelectric thin films. All of these results showed that Ce -doped Bi 2 Ti 2 O 7 thin films had potential for DRAM and MOS applications.

Lead Titanate Thin Films Prepared by Metallorganic Chemical Vapor Deposion (MOCVD) on Sapphire, Pt, and RuOx Substrates

1993 ◽  
Vol 335 ◽  
Author(s):  
Warren C. Hendricks ◽  
Seshu B. Desu ◽  
Chien H. Peng
Keyword(s):  
Thin Films ◽  
Ruthenium Oxide ◽  
Chemical Vapor ◽  
X Ray Diffraction ◽  
Experimental Conditions ◽  
X Ray ◽  
Composition Control ◽  
Oxide Substrates ◽  
Temperature Deposition ◽  
Titanium Ethoxide

AbstractTransparent and highly specular PbTiO3 thin films were deposited on sapphire, platinum and ruthenium oxide-coated silicon wafers by hot-wall metallorganic chemical vapor deposition (MOCVD). Lead bis-tetramethylheptadionate and titanium ethoxide were used as chemical precursors. Films were deposited over a range of experimental conditions. X-ray diffraction (XRD) was used to determine the phases present in the films; Scanning Electron Microscopy (SEM) was used to examine the surface morphology and Energy Dispersive Spectroscopy (EDS) was used to determine the composition. Optical spectra were obtained to confirm the highly dense and transparent nature of the films. The chemical stability of the ruthenium oxide substrates in the MOCVD environment as well as the existence of a high-temperature deposition regime for composition control are also discussed.

Technology of Ultrasonic and Pulse Electrodeposition for ZnSe Thin Films

2010 ◽  
Vol 663-665 ◽  
pp. 1234-1237 ◽  
Author(s):  
Cheng Guang Zhang ◽  
Kong Zhao Li ◽  
Juan Miao
Keyword(s):  
Thin Films ◽  
Sodium Citrate ◽  
Acidic Solution ◽  
Dispersion Analysis ◽  
Pulse Electrodeposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Solution Interface ◽  
Action Model ◽  
Znse Thin Films

The ZnSe thin films are co-deposited in the ZnSO4, Na2SeO3 and sodium citrate acidic solution, and the mechanism of the ultrasonic and pulse electrodeposition for ZnSe films is explained by the electrode-solution interface action model. Ultrasonic increases the activation energy of the [ZnCit]- and HSeO3 - and improves flow field of the solution between electrode and solution interface. The pulse current promotes the diffusion of solution and advantageously realizes the co-deposition of ZnSe films. The ZnSe thin films are pulse electrodeposited in zinc sulfate, selenite sodium and sodium citrate acidic solution with the action of ultrasonic. Finally, the ZnSe films have been characterized by the scanning electron microscope (SEM), the energy dispersion analysis of X-ray (EDAX) and X-ray diffraction (XRD).

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