scholarly journals Joining between Boron Nitride Nanocones and Nanotubes

2020 ◽  
Vol 2020 ◽  
pp. 1-6 ◽  
Author(s):  
Nawa Alshammari
Keyword(s):  
Boron Nitride ◽  
Positive Curvature ◽  
Scanning Tunneling ◽  
Underlying Structure ◽  
Nanoscale Devices ◽  
Tunneling Microscopy ◽  
Small Perturbations ◽  
Potential Applications ◽  
Bn Nanostructures ◽  
Bn Nanotubes

Different nanostructures of boron nitride have been observed experimentally such as fullerenes, tubes, cones, and graphene. They have received much attention due to their physical, chemical, and electronic properties that lead them to numerous applications in many nanoscale devices. Joining between nanostructures gives rise to new structures with outstanding properties and potential applications for the design of probes for scanning tunneling microscopy and other nanoscale devices, as carriers for drug delivery and liquid separation. This paper utilizes calculus of variations to model the joining between two types of BN nanostructures, namely, BN nanotubes and BN nanocones. Based on the curvature of the join curve, the joining of these structures can be divided into two models. Model I refers to when the join profile includes positive curvature only, and Model II contains both positive and negative curvatures. The main goal here is to formulate the basic underlying structure from which any such small perturbations can be viewed as departures from an ideal model. For this scenario of joining, we successfully present simple models based on joining BN nanotubes to BN nanocones with five different angles of the cone.

scholarly journals Mathematical Modelling for Joining Boron Nitride Graphene with Other BN Nanostructures

2020 ◽  
Vol 2020 ◽  
pp. 1-7
Author(s):  
Nawa A. Alshammari
Keyword(s):  
Boron Nitride ◽  
Positive Curvature ◽  
Boron Nitride Nanotubes ◽  
Underlying Structure ◽  
First Case ◽  
Scanning Tunnelling ◽  
Potential Applications ◽  
Exciting Potential ◽  
Tunnelling Microscopy ◽  
Bn Nanostructures

Boron nitride (BN) nanomaterials such as boron nitride graphenes, boron nitride nanotubes, and boron nitride nanocones are attracting attention among the most promising nanomaterials due to their physical, chemical, and electronic properties when compared to other nanomaterials. BN nanomaterials suggest many exciting potential applications in various fields. Joining between BN nanostructures gives new enhanced structures with outstanding properties and potential applications for design of probes for scanning tunnelling microscopy and other nanoscale devices. This paper uses calculus of variations to model the joining between BN graphene with other BN nanostructures: BNNTs and BNNCs. Furthermore, during the joining between these BN nanostructures, this research examines two models which are depending on the curvature of the join profile. For the first case, Model I refers to when the join profile only includes positive curvature where for the second case, Model II is considered for both positive and negative curvatures. Thus, the purpose of this research is to formulate the basic underlying structure to present simple models based on joining BN graphene to other BN nanostructures.

scholarly journals Probing Electronic Properties of Graphene on the Atomic Scale by Scanning Tunneling Microscopy and Spectroscopy

2014 ◽  
Vol 1 (1) ◽  
Author(s):  
Li Gao
Keyword(s):  
Silicon Carbide ◽  
Boron Nitride ◽  
Silicon Dioxide ◽  
Scanning Tunneling Microscopy ◽  
Electronic Properties ◽  
Crucial Role ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Device Applications

AbstractAtomic scale investigations of the electronic properties of graphene are playing a crucial role in understanding and tuning the exotic properties of this material for its potential device applications. Scanning tunneling microscopy (STM) and spectroscopy (STS) are unique techniques for atomic scale investigations and have been extensively used in graphene research. In this article, we review recent progresses in STM and STS studies of the electronic properties of suspended graphene as well as graphene supported by different substrates including graphite, metals, silicon carbide, silicon dioxide and boron nitride.

Imaging Self-Assembled Monolayers: a Comparative Study Between AFM and Field-Emission SEM

1999 ◽  
Vol 5 (S2) ◽  
pp. 324-325
Author(s):  
P.E. Russell ◽  
B.R.A. Neves ◽  
M. E. Salmon ◽  
E.B. Troughton
Keyword(s):  
Self Assembled Monolayers ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Adhesion Promoters ◽  
Reduced Height ◽  
Scanning Area ◽  
Assembled Monolayers ◽  
Potential Applications ◽  
Potential Applicability ◽  
Self Assembled

Self-assembled monolayers (SAM) and multilayers of organic materials have been intensely studied in the past years, due to their numerous potential applications as, for example, lubricants, corrosioninhibitors and/or adhesion-promoters [1,2]. Due to the reduced height of SAM, typically a couple of nanometers, the various Scanning Probe Microscopy (SPM) techniques, especially Scanning Tunneling Microscopy (STM) and Atomic Force Microscopy (AFM), have been the tools of choice in the morphological and structural study of those systems [1,2]. However, these SPM techniques have some limitations. One of them is the reduced scanning area, preventing the assessment of SAM coverage in large substrate areas, which is one of the key issues in studies of the potential applicability of SAM. Furthermore, due to their imaging principle, the SPM techniques are not suited to analyze SAM on substrates where the roughness is of the order of hundreds of nanometers or higher, impeding their application on most non-ideal (atomically flat) substrates.

Nanostructured BN–Mg composites: features of interface bonding and mechanical properties

2016 ◽  
Vol 18 (2) ◽  
pp. 965-969 ◽  
Author(s):  
Dmitry G. Kvashnin ◽  
Arkady V. Krasheninnikov ◽  
Dmitry Shtansky ◽  
Pavel B. Sorokin ◽  
Dmitri Golberg
Keyword(s):  
Mechanical Properties ◽  
Boron Nitride ◽  
First Principles ◽  
First Principles Calculations ◽  
Interface Bonding ◽  
The Stability ◽  
Bn Nanostructures ◽  
Bn Nanotubes

Using first-principles calculations, we investigate the stability and mechanical properties of a nanocomposite made of magnesium reinforced with boron nitride (BN) nanostructures (BN nanotubes and BN monolayers).

TUNABLE ELECTRIC CONDUCTIVITIES OF Au-DOPED BORON NITRIDE NANOTUBES

NANO ◽  
2007 ◽  
Vol 02 (06) ◽  
pp. 367-372 ◽  
Author(s):  
Y. J. CHEN ◽  
L. FU ◽  
Y. CHEN ◽  
J. ZOU ◽  
J. LI ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
Simulation Studies ◽  
Metallic Behavior ◽  
Essential Requirement ◽  
Potential Applications ◽  
Bn Nanotube ◽  
Computing Simulation ◽  
Bn Nanotubes ◽  
Nanotube Films

Tunable electronic properties of nanotubes are an essential requirement for building nanotube circuits and devices. We have produced BN nanotube films with controlled electric conductivities by Au doping. The Au -doped BN nanotube films have been found to exhibit from semiconducting to metallic behavior under different Au contents. Both experimental and computing simulation studies reveal that the conductivities of the doped film are improved by the incorporation of Au atoms into nanotube walls. The doped BN nanotubes and films are expected to have potential applications in catalysts, sensors and nanoelectronics.

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